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FODM3012R2V

Onsemi

FODM3012R2V by Onsemi

FODM3012R2V by Onsemi is a single TRIAC output optocoupler with a max on-state voltage of 3V and forward current of 0.06A. It operates b/w -40 °C to 100°C, has an isolation voltage of 3750V, and is ideal for applications requiring optocoupler trigger device outputs in surface mount configurations.

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ACDS - Activité Composants Distribution Service

France . 1,272 parts In-Stock

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Bristol Electronics

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Dan-Mar Components

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Digiode

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PC Components Company LLC

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Ampacity Inc.

Singapore . 218 parts In-Stock

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Problanco Electronics

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SupplyDigital Components

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Corphita

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Kulean Microsystems

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Overview

Looking for a reliable optocoupler trigger device output? Look no further than the FODM3012R2V by Onsemi. With its high-quality manufacturing and superior performance, this product is perfect for a wide range of applications. From industrial automation to consumer electronics, this optocoupler offers excellent value, reliability, and efficiency. Trust Onsemi to deliver top-notch products that meet your needs and exceed your expectations. Upgrade your projects with the FODM3012R2V and experience the difference today.

Feature Benefit Bullets

Maximum On State Voltage: 3 V

Low on state voltage allows for efficient operation and reduces power consumption.

Configuration: SINGLE

SINGLE configuration simplifies installation and setup process.

Maximum Forward Current: 0.06 A

High maximum forward current capability ensures reliable performance under load.

Optoelectronic Type: TRIAC OUTPUT OPTOCOUPLER

TRIAC output optocoupler provides compatibility with a wide range of devices and applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for use in various environmental conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality in colder environments.

Maximum Input Trigger Current: 0.005 A

Low input trigger current requirement reduces the need for complex circuitry.

Repetitive Off-state Voltage (Peak): 250 V

High off-state voltage rating enhances safety and reliability in operation.

Packing Method: TR, 13 INCH

TR packing method ensures convenient storage and handling of the product.

Maximum Reverse Leakage Current: 0.0001 A

Low reverse leakage current minimizes power loss and enhances efficiency.

Maximum Isolation Voltage: 3750 V

High isolation voltage ensures safe operation and protects connected devices.

Mounting Feature: SURFACE MOUNT

Surface mount design provides easy and secure installation.

Maximum On State Current: 0.07 A

High maximum on state current allows for handling higher loads without issues.

Technical Specifications

Optocoupler Trigger Device Outputs FODM3012R2V attributes and parameters. Explore more Optocoupler Trigger Device Outputs devices from Onsemi

Specs

Additional Features:

IEC-60747-5-5, UL APPROVED

Configuration:

SINGLE

Maximum Forward Current:

.06 A

Maximum Input Trigger Current:

.005 A

Maximum Isolation Voltage:

3750 V

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.07 A

Maximum On State Voltage:

3 V

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR, 13 INCH

Repetitive Off-state Voltage (Peak):

250 V

Maximum Reverse Leakage Current:

.0001 A

Trade Compliance

FODM3012R2V Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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