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FOD4108DV

Onsemi

FOD4108DV by Onsemi

FOD4108DV by Onsemi is a single TRIAC output optocoupler with 3A peak surge current and 800V repetitive off-state voltage. It operates b/w -55 to 100 °C, with 5000V isolation voltage. Ideal for triggering devices in applications requiring high-voltage protection and signal isolation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,775 parts In-Stock

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Vyrian

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Native Components

USA . 458 parts In-Stock

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$1.912

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Northwest PG Solutions

USA . 1,518 parts In-Stock

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SupplyDigital Components

Austria . 5,601 parts In-Stock

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Kulean Microsystems

USA . 2,932 parts In-Stock

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Problanco Electronics

Mexico . 2,367 parts In-Stock

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TANS Electronics

Latvia . 2,270 parts In-Stock

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UHIMA Technologies

Türkiye . 395 parts In-Stock

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Corohmni

South Africa . 344 parts In-Stock

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Corphita

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Overview

Enhance your electronic circuits with the FOD4108DV by Onsemi, a high-quality optocoupler trigger device output. Manufactured by Onsemi, known for their reliability and innovation, this product offers peak surge current of 3A and maximum isolation voltage of 5000V. Ideal for various applications, this optocoupler provides seamless connectivity and protection against voltage surges. Upgrade your projects with the FOD4108DV and experience improved performance and efficiency like never before.

Feature Benefit Bullets

Maximum On State Voltage: 3 V

Low on state voltage ensures efficient operation and protection of connected components.

Configuration: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Peak Surge Current: 3 A

High surge current capability ensures reliable performance under transient conditions.

Maximum Forward Current: 0.03 A

Suitable for low power applications while maintaining optimal performance.

Optoelectronic Type: TRIAC OUTPUT OPTOCOUPLER WITH ZERO CRSVR

Triac output with zero crossing detection provides precise control and synchronization in switching applications.

Maximum Operating Temperature: 100 °C

Wide operating temperature range allows for use in various environments.

Minimum Operating Temperature: -55 °C

Operational at low temperatures, making it suitable for cold environments.

Maximum Input Trigger Current: 0.002 A

Low trigger current requirement for activation, increasing energy efficiency.

Repetitive Off-state Voltage (Peak): 800 V

High off-state voltage rating for reliable insulation and protection against voltage spikes.

Packing Method: TUBE

Tube packaging ensures safe transportation and storage of the product.

Nominal Input Trigger Current: 0.65 mA

Precise trigger current specification for consistent performance in triggering the device.

Maximum Reverse Leakage Current: 0.00001 A

Negligible reverse leakage current to prevent unwanted conduction in off-state condition.

Minimum Peak Off-state Voltage: 800 V

High off-state voltage rating for reliable isolation and safety in the circuit.

Maximum Isolation Voltage: 5000 V

High isolation voltage capability for enhanced safety and protection of connected systems.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting for easy installation and secure placement in the circuit board.

Technical Specifications

Optocoupler Trigger Device Outputs FOD4108DV attributes and parameters. Explore more Optocoupler Trigger Device Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED, VDE APPROVED

Configuration:

SINGLE

Maximum Forward Current:

.03 A

Maximum Input Trigger Current:

.002 A

Nominal Input Trigger Current:

.65 mA

Maximum Isolation Voltage:

5000 V

Mounting Feature:

No. of Elements:

1

Maximum On State Voltage:

3 V

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Packing Method:

TUBE

Minimum Peak Off-state Voltage:

800 V

Peak Surge Current:

3 A

Repetitive Off-state Voltage (Peak):

800 V

Maximum Reverse Leakage Current:

.00001 A

Trade Compliance

FOD4108DV Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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