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FHP3130IS5X

Onsemi

FHP3130IS5X by Onsemi

FHP3130IS5X by Onsemi is a 5-terminal Op Amp with 6000uV max input offset voltage, 100dB CMRR, and 50MHz bandwidth. Ideal for industrial applications requiring high precision amplification in compact spaces due to its small outline package and low supply voltage of 3V.

Median Price

$0.243

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 239 parts In-Stock

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Digiode

USA . 1,744 parts In-Stock

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Chip Stock

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ABC Electronics Ltd.

UK . 250 parts In-Stock

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Whistler Technology

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Native Components

USA . 651 parts In-Stock

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$0.168

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Northwest PG Solutions

USA . 1,937 parts In-Stock

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$0.185

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$0.163

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Ampacity Inc.

Singapore . 181 parts In-Stock

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$7.410

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Kepictronics

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Kulean Microsystems

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Problanco Electronics

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TANS Electronics

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Authorized Procurement Solutions

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SupplyDigital Components

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Corphita

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Benley Electronics

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UHIMA Technologies

Türkiye . 525 parts In-Stock

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Microchip USA

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Corohmni

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Overview

Unleash the power of precision with the FHP3130IS5X operational amplifier by Onsemi. Crafted with cutting-edge technology and industrial-grade materials, this small outline, thin profile amplifier offers unmatched performance and reliability in a compact package. With a wide range of applications in signal conditioning, instrumentation, and control systems, this amplifier provides customers with high accuracy, low noise, and exceptional bandwidth capabilities. Elevate your projects to new heights with the FHP3130IS5X and experience superior quality and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the operational amplifier, ensuring a longer lifespan.

Maximum Input Offset Voltage: 6000 uV

Low input offset voltage ensures accuracy in signal amplification and minimizes errors in the output signal.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on printed circuit boards, saving space and facilitating mass production.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio ensures efficient removal of unwanted noise and interference from the input signal, resulting in cleaner output signal.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V allows for low power consumption, making it suitable for battery-powered devices.

No. of Terminals: 5

Having 5 terminals provides versatility in signal input and output connections, accommodating different circuit configurations.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Small outline and thin profile package style saves space on the PCB, making it ideal for compact electronic devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this operational amplifier can withstand harsh environmental conditions and maintain reliable performance.

Nominal Unity Gain Bandwidth: 160000 kHz

High unity gain bandwidth ensures stable and accurate amplification of signals across a wide frequency range.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this operational amplifier suitable for energy-efficient and reliable applications.

Technical Specifications

Operational Amplifiers (Op Amps) FHP3130IS5X attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Total Functions:

1

Powered:

No

Frequency Compensation:

No

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

50 MHz

Nominal Unity Gain Bandwidth:

160 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Minimum Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

6000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

110 V/us

Maximum Input Offset Current (IIO):

800 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6.3 V

Maximum Negative Supply Voltage:

-5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

3.5 mA

Physical Characteristics

Length:

0.116 in (2.95 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

FHP3130IS5X Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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