Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Onsemi FDA28N50 is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 112A and EAS of 2391mJ, making it suitable for high-power operations. With a max ID of 28A and 0.155 ohm RDS(on), this transistor offers efficient performance in ENHANCEMENT MODE operation.
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Chip1Stop
$2.930
Farnell
$4.210
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DigiKey
$5.760
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Newark
$6.580
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Element14
$6.780
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Freelance Electronics
$1.748
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Digiode
$2.451
Nova Conductors
$2.606
TME
$5.310
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Maritex
$6.326
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Chip Stock
Vyrian
Flip Electronics
ComSIT Distribution GmbH
Aztec Data Supply Inc.
$1.474
Corohmni
Advanced Electronics
$1.863
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Ampacity Inc.
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$2.322
Component Stockers USA
$2.500
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Argo Parts USA
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$2.476
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Continental Prestige Electronics
$4.460
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Andel Nordic
$7.415
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Microchip USA
$32.305
RC Electronics
$2.870
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Perfect Parts
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TANS Electronics
SupplyDigital Components
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A-Z Elektronik GmbH
Alle Elektronik GmbH
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S.R.D Solutions
UHIMA Technologies
The plastic/epoxy package body material provides good insulation and protection for the transistor, making it durable and long-lasting.
Having a built-in diode simplifies circuit design and can provide better protection against reverse voltage and current flow.
The high breakdown voltage of 500V allows this transistor to be used in high voltage applications with confidence.
The high pulsed drain current rating of 112A makes this transistor suitable for applications requiring high current switching capabilities.
With a maximum power dissipation of 310W, this transistor can handle high power loads without overheating.
The high operating temperature of 150°C ensures that this transistor can operate reliably in harsh environments without performance degradation.
Power Field Effect Transistors (FET) FDA28N50 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Configuration:
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Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
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Operating Mode:
Maximum Operating Temperature:
Package Body Material:
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Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
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FDA28N50 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LM555CN
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
LL4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
DS18B20Z
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;
06035C103KAT2A
KYOCERA AVX
06035C103KAT2A by KYOCERA AVX is a SMT ceramic capacitor with 0.01uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and 10% tolerance. Ideal for applications requiring compact surface mount capacitors with stable performance in a wide temperature range.
SS14
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;
LM2675M-ADJ/NOPB
National Semiconductor
SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
L78L05ABZ-AP
STMicroelectronics
L78L05ABZ-AP by STMicroelectronics is a BIPOLAR fixed positive single output standard regulator with an operating temperature range of -40 to 125°C. It has a nominal output voltage of 5V, max load regulation of 0.06%, and can handle a max output current of 0.07A. Ideal for applications requiring stable voltage regulation in various electronic devices.
SMBJ18CA
Rectron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
PIC18F4550-I/ML
Microchip Technology
The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
Synsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Molex
CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;
1N4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
World Products
BAV99
Kingwell Technonlogy
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;
BSC123N08NS3GXT
Infineon Technologies
BSC123N08NS3GXT by Infineon is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 220A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.0123 ohm RDS(on) and 66W power dissipation.
IRFP460LC
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): 225;
FDT439N
FDT439N by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, capable of handling 20A IDM and 6.3A ID. With an operating temperature of up to 150°C, this MOSFET in PLASTIC/EPOXY package is suitable for various high-power electronic designs.
BSC030P03NS3GAUMA1
BSC030P03NS3GAUMA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 200A IDM, and 0.0046 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. The transistor has a small outline package style and can withstand temperatures from -55 to 150 °C.
STD12NF06LT4
STD12NF06LT4 by STMicroelectronics is an N-channel power FET with a 60V DS breakdown voltage and 48A max pulsed drain current. It is used for switching applications, operates in enhancement mode, and has a built-in diode. The transistor features a 0.12 ohm max drain-source resistance and can handle up to 30W of power dissipation.
FDD8424H
FDD8424H by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations. It has a 40V DS breakdown voltage, 55A max pulsed drain current, and 0.024 ohm max drain-source resistance. Ideal for switching applications, this MOSFET operates in enhancement mode with a max temperature of 150°C.
FDMS86163P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 100 V;
SI7439DP-T1-E3
Vishay Intertechnology
Vishay Intertechnology's SI7439DP-T1-E3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 50A IDM, 80mJ EAS, and 0.09 ohm Drain-Source On Resistance. Operating at up to 150°C, it has a small outline package style for efficient heat dissipation.
IRF640STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 2; Case Connection: DRAIN;
IRF9358TRPBF
IRF9358TRPBF by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage and 73A IDM. Ideal for SWITCHING applications, it features a 0.0163 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE at up to 150°C.
CSD19536KTT
Texas Instruments
CSD19536KTT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 806mJ, operating in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max ID of 200A and 0.0028 ohm RDS(on), suitable for high-power switching circuits.
IRFS7530TRL7PP
Infineon's IRFS7530TRL7PP is a N-CHANNEL FET with 60V DS Breakdown Voltage, 240A ID, and 0.0014 ohm RDS(on). Ideal for power applications, it offers 375W Pd max, operates up to 175°C, and features MOSFET technology. Suitable for surface mount designs with matte tin finish.
SI4946BEY-T1-E3
Vishay Intertechnology's SI4946BEY-T1-E3 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 30A IDM, and 0.041 ohm RDS(ON). Ideal for applications requiring high power dissipation in small outline packages.
IPD90P04P4L04ATMA1
IPD90P04P4L04ATMA1 by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 360A and a max drain-source on resistance of 0.0043 ohm. This transistor is commonly used in applications requiring high power and low resistance.
IRLML6402
IRLML6402 by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM, 11mJ EAS, and 0.065 ohm RDS(ON). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
FQD12N20LTM
FQD12N20LTM by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.32 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 55W and can withstand temperatures from -55 to 150°C.
BSP125H6327XTSA1
Infineon's BSP125H6327XTSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.48A IDM, and 45 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance. Features include single configuration with built-in diode, gull wing terminals, and small outline package style.
IRF3205ZSTRLPBF
IRF3205ZSTRLPBF by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 440A. This transistor is commonly used for switching applications.
IRFZ44NSTRL
IRFZ44NSTRL by International Rectifier is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 160A. This transistor is commonly used for switching applications.
FDPF10N60NZ
FDPF10N60NZ by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 40A and EAS of 550mJ. With a 0.75 ohm RDS(on), this transistor operates in ENHANCEMENT MODE up to 150°C, making it suitable for high-power switching circuits.
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FDA24N50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Drain Current (Abs) (ID): 24 A; Maximum Pulsed Drain Current (IDM): 96 A;
FDA20N50-F109
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Qualification: Not Qualified; Transistor Element Material: SILICON;
FDA20N50_F109
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDA24N40F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 235 W; JESD-609 Code: e3; Maximum Operating Temperature: 150 Cel;
The Onsemi FDA24N40F is a N-CHANNEL Power FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 92A and EAS of 1190mJ, ensuring high performance in ENHANCEMENT MODE operation. With a max power dissipation of 235W and 0.19 ohm RDS(on), it offers reliable performance in various industrial settings.
FDA28N50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 28 A;
FDA28N50F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 2352 mJ;
The Onsemi FDA28N50F is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 112A IDM. Ideal for SWITCHING applications, it features a 0.175 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE up to 150°C.
FDA20N50F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 388 W; No. of Terminals: 3; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 388 W; Maximum Operating Temperature: 150 Cel; Terminal Form: THROUGH-HOLE;
FDA2712
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 250 V; Package Shape: RECTANGULAR; Qualification: Not Qualified;
FDA20N50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;
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