Loading...

DSK10C-BT

Onsemi

DSK10C-BT by Onsemi

DSK10C-BT by Onsemi is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 200V. It comes in an axial package style made of plastic/epoxy, suitable for applications requiring isolated case connection. Operating temperature up to 150 °C makes it ideal for various electronic circuits.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 324,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.038

324,000

-

-

-

$0.038

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 914 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

914

$0.038

-

-

-

Digiode

USA . 431 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

431

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 296 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

296

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 182 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

182

$0.038

-

-

-

Component Stockers USA

USA . 638,624 parts In-Stock

1+ parts

$0.050

100+ parts

$0.050

1k+ parts

$0.040

10k+ parts

$0.040

638,624

$0.050

$0.050

$0.040

$0.040

Native Components

USA . 190 parts In-Stock

1+ parts

$0.073

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

190

$0.073

-

-

$0.070

Northwest PG Solutions

USA . 1,216 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

$0.071

1,216

$0.080

-

-

$0.071

QUARKTWIN TECHNOLOGY LTD

USA . 25,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25,900

-

-

-

-

SupplyDigital Components

Austria . 6,547 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,547

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

TANS Electronics

Latvia . 4,341 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,341

-

-

-

-

Kulean Microsystems

USA . 2,675 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,675

-

-

-

-

Problanco Electronics

Mexico . 1,130 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,130

-

-

-

-

Corphita

USA . 742 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

742

-

-

-

-

UHIMA Technologies

Türkiye . 343 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

343

-

-

-

-

Overview

Unlock the power of efficient energy management with the DSK10C-BT by Onsemi. As a trusted manufacturer in the industry of Diodes & Rectifiers, Onsemi delivers top-quality products that guarantee reliability and performance. Designed with a single configuration and a round package shape, this diode offers superior functionality with a maximum output current of 1A and a maximum repetitive peak reverse voltage of 200V. Perfect for a wide range of applications, the DSK10C-BT provides customers with the value, benefits, and advantages they need for their projects to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the diode, making it suitable for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can withstand high temperature environments, ensuring reliable performance.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high maximum repetitive peak reverse voltage of 200V allows for usage in applications requiring higher voltage handling capacity.

Maximum Output Current: 1 A

With a maximum output current of 1A, this diode is capable of handling moderate levels of current, making it suitable for various circuit requirements.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it has low forward voltage drop, high surge current capability, and low leakage current, making it ideal for rectification and power supply applications.

Technical Specifications

Diodes & Rectifiers DSK10C-BT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Trade Compliance

DSK10C-BT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20