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DSK10C-AT1

Onsemi

DSK10C-AT1 by Onsemi

DSK10C-AT1 by Onsemi is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 200V. It comes in an axial package style made of plastic/epoxy, suitable for applications requiring high temperature resistance up to 150 °C.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

30,000

-

$0.092

$0.077

$0.068

DigiKey

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.120

30,000

-

-

-

$0.120

Verical

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

30,000

-

-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 703 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

703

$0.072

-

-

-

Vyrian

USA . 1,990 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

-

1,990

$0.076

-

-

-

DigiKey Marketplace

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

30,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 29,606 parts In-Stock

1+ parts

$0.065

100+ parts

-

1k+ parts

-

10k+ parts

-

29,606

$0.065

-

-

-

Corphita

USA . 663 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

-

663

$0.068

-

-

-

Native Components

USA . 942 parts In-Stock

1+ parts

$0.073

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

942

$0.073

-

-

$0.070

Corohmni

South Africa . 126 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

-

126

$0.076

-

-

-

Northwest PG Solutions

USA . 407 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

$0.071

407

$0.080

-

-

$0.071

Continental Prestige Electronics

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.066

10k+ parts

-

30,000

-

-

$0.066

-

Kulean Microsystems

USA . 7,764 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,764

-

-

-

-

TANS Electronics

Latvia . 6,965 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,965

-

-

-

-

Problanco Electronics

Mexico . 5,656 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,656

-

-

-

-

SupplyDigital Components

Austria . 3,454 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,454

-

-

-

-

UHIMA Technologies

Türkiye . 671 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

671

-

-

-

-

Overview

Elevate your electronic projects with the DSK10C-AT1 diode by Onsemi, a trusted manufacturer known for high-quality components. As part of the Diodes & Rectifiers category, this product offers reliability and efficiency in various applications. With a maximum output current of 1A and a maximum repetitive peak reverse voltage of 200V, customers can trust in the value and benefits that this diode provides. Trust Onsemi to deliver superior performance and durability for all your project needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good insulation and protection for the diode, making it durable and reliable for long-term use.

Config: SINGLE

The single configuration simplifies the circuit design and installation process, making it easier to integrate this diode into various electronic systems.

Package Shape: ROUND

The round package shape allows for easy mounting and secure placement within electronic devices, ensuring a compact and efficient design.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the likelihood of errors during installation, making it user-friendly.

Package Style (Meter): LONG FORM

The long form package style provides additional space for easier handling and connection, improving the overall usability of the diode.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this diode can withstand high temperatures, making it suitable for a wide range of applications.

Terminal Finish: Tin (Sn)

The tin terminal finish enhances the conductivity and solderability of the diode, ensuring a reliable and stable electrical connection.

Terminal Position: AXIAL

The axial terminal position simplifies the installation process and allows for efficient heat dissipation, ensuring optimal performance.

Case Connection: ISOLATED

The isolated case connection helps prevent electrical interference and improves safety by isolating the diode from other components in the circuit.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed specifically for converting AC to DC, making it an ideal choice for power supply and rectification applications.

Maximum Output Current: 1 A

With a maximum output current of 1A, this diode can handle moderate power requirements, making it suitable for a variety of electronic devices and circuits.

Terminal Form: WIRE

The wire terminal form allows for easy and secure connection, facilitating the installation process and ensuring a reliable electrical connection.

Maximum Repetitive Peak Reverse Voltage: 200 V

The 200V maximum repetitive peak reverse voltage rating ensures that the diode can handle voltage fluctuations and reverse polarity conditions, enhancing its reliability.

Diode Element Material: SILICON

Silicon is a common material used in diode manufacturing due to its high conductivity and efficiency, ensuring optimal performance and reliability of the diode.

Technical Specifications

Diodes & Rectifiers DSK10C-AT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Trade Compliance

DSK10C-AT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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