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DD82SC

Onsemi

DD82SC by Onsemi

The Onsemi DD82SC is a single rectifier diode with a max forward voltage of 1.8V and output current of 8A. With a max reverse recovery time of 1.5us, it is ideal for applications requiring high repetitive peak reverse voltage up to 1600V, such as power supply units and industrial equipment.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,331 parts In-Stock

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Vyrian

USA . 1,192 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 361 parts In-Stock

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$0.507

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361

$0.507

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Northwest PG Solutions

USA . 2,219 parts In-Stock

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$0.558

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$0.492

2,219

$0.558

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$0.492

Kulean Microsystems

USA . 5,034 parts In-Stock

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5,034

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Problanco Electronics

Mexico . 2,992 parts In-Stock

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SupplyDigital Components

Austria . 2,106 parts In-Stock

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TANS Electronics

Latvia . 1,410 parts In-Stock

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Corphita

USA . 947 parts In-Stock

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UHIMA Technologies

Türkiye . 182 parts In-Stock

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Corohmni

South Africa . 58 parts In-Stock

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Overview

Elevate your electronic designs with the DD82SC by Onsemi, a top-tier player in the industry known for premium quality and reliability. As part of the Diodes & Rectifiers category, this product offers unparalleled performance and efficiency in various applications. The DD82SC stands out for its exceptional value, benefits, and advantages it brings to customers looking for superior diode solutions. Trust Onsemi to deliver cutting-edge technology that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, making it ideal for various electronic applications.

Maximum Reverse Recovery Time: 1.5 us

The fast reverse recovery time ensures efficient switching performance, reducing power losses and improving overall efficiency of the circuit.

Maximum Forward Voltage (VF): 1.8 V

The low forward voltage drop of 1.8V ensures minimal power loss and helps in achieving high efficiency in the circuit.

Maximum Output Current: 8 A

The high maximum output current of 8A allows the diode to handle heavy loads without getting damaged, making it suitable for high-power applications.

Maximum Repetitive Peak Reverse Voltage: 1600 V

The high reverse voltage rating of 1600V provides a high level of protection against voltage spikes and surges, making it reliable in demanding environments.

Technical Specifications

Diodes & Rectifiers DD82SC attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

Maximum Non Repetitive Peak Forward Current:

32 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

1600 V

Maximum Reverse Recovery Time:

1.5 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

DD82SC Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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