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DD82RC

Onsemi

DD82RC by Onsemi

The Onsemi DD82RC is a single rectifier diode with a max forward voltage of 1.8V and output current of 8A. With a max reverse recovery time of 1.5us, it is ideal for applications requiring high repetitive peak reverse voltage up to 1600V, such as power supply units and industrial equipment.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,501 parts In-Stock

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Vyrian

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Native Components

USA . 796 parts In-Stock

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$1.059

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Northwest PG Solutions

USA . 1,985 parts In-Stock

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Kulean Microsystems

USA . 6,811 parts In-Stock

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SupplyDigital Components

Austria . 2,873 parts In-Stock

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Corphita

USA . 1,930 parts In-Stock

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Problanco Electronics

Mexico . 1,163 parts In-Stock

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UHIMA Technologies

Türkiye . 423 parts In-Stock

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Corohmni

South Africa . 55 parts In-Stock

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TANS Electronics

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Overview

Discover the DD82RC by Onsemi, a top-quality rectifier diode that offers unparalleled performance and reliability. Manufactured by Onsemi, a renowned leader in the industry, this diode is perfect for a wide range of applications. With a maximum output current of 8A and a maximum reverse recovery time of 1.5us, this diode provides exceptional value and benefits to customers. Whether you're looking to improve efficiency in power supplies or enhance circuit designs, the DD82RC is the perfect choice for your needs. Trust in Onsemi's expertise and choose the DD82RC for all your diode and rectifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and durability, making the diode reliable for long-term use.

Maximum Reverse Recovery Time: 1.5 us

Fast reverse recovery time ensures efficient switching and reduces power losses in the circuit.

Maximum Forward Voltage (VF): 1.8 V

Low forward voltage drop helps in minimizing power dissipation and energy loss.

Maximum Output Current: 8 A

High output current capability allows the diode to handle heavy loads without getting damaged.

Maximum Repetitive Peak Reverse Voltage: 1600 V

High reverse voltage rating makes the diode suitable for applications requiring high voltage handling capability.

Diode Element Material: SILICON

Silicon diodes are widely used due to their high efficiency, low cost, and reliability.

Technical Specifications

Diodes & Rectifiers DD82RC attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

Maximum Non Repetitive Peak Forward Current:

32 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

1600 V

Maximum Reverse Recovery Time:

1.5 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

DD82RC Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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