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CAT660ERD8

Onsemi

CAT660ERD8 by Onsemi

CAT660ERD8 by Onsemi is a small outline, heat sink package with 8 terminals. It operates in industrial temperature range (-40 to 85 °C) and supports input voltage from 1.5V to 5.5V. Ideal for switched capacitor converter applications due to its CMOS technology and double inverter switcher configuration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 690 parts In-Stock

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Digiode

USA . 463 parts In-Stock

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Prism Electronics

USA . 375 parts In-Stock

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Native Components

USA . 565 parts In-Stock

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$0.206

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$0.197

565

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Northwest PG Solutions

USA . 1,812 parts In-Stock

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$0.226

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TANS Electronics

Latvia . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 3,283 parts In-Stock

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Problanco Electronics

Mexico . 1,853 parts In-Stock

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Corphita

USA . 1,083 parts In-Stock

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Kulean Microsystems

USA . 972 parts In-Stock

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Corohmni

South Africa . 457 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 89 parts In-Stock

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Overview

Enhance your power management solutions with the CAT660ERD8 from Onsemi. This switching regulator & controller boasts top-notch quality and reliability, thanks to its manufacturer's cutting-edge technology. Ideal for a variety of applications, this small outline, heat sink package ensures efficient performance in industrial settings. With a wide input voltage range and dual terminal position, customers can expect seamless integration and enhanced productivity. Experience the value and benefits that Onsemi's CAT660ERD8 brings to your power management needs.

Feature Benefit Bullets

Surface Mount: YES

Easy to mount on PCB, saves space and makes manufacturing process more efficient.

Package Shape: SQUARE

Square shape allows for more compact design and efficient use of PCB space.

No. of Terminals: 8

Sufficient terminals for connections, enabling versatile use in different circuit designs.

Maximum Operating Temperature: 85 °C

Can operate at higher temperatures, suitable for industrial applications where heat may be a concern.

Nominal Input Voltage: 5 V

Works efficiently with standard 5V input, compatible with many electronic devices.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ensuring reliable performance.

Minimum Input Voltage: 1.5 V

Can operate at low input voltage levels, suitable for battery-powered devices.

Technical Specifications

Switching Regulators & Controllers CAT660ERD8 attributes and parameters. Explore more Switching Regulators & Controllers devices from Onsemi

Specs

Maximum Input Voltage:

5.5 V

Minimum Input Voltage:

1.5 V

Nominal Input Voltage:

5 V

JESD-30 Code:

S-XDSO-N8

JESD-609 Code:

e0

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Surface Mount:

YES

Switcher Config:

DOUBLER INVERTER

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width (mm):

4 mm

Trade Compliance

CAT660ERD8 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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