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CAT5140ZI-00-GT3

Onsemi

CAT5140ZI-00-GT3 by Onsemi

CAT5140ZI-00-GT3 by Onsemi is a 2-WIRE SERIAL digital potentiometer with 100000 ohm total resistance, 256 positions, and 100 ppm/°C temperature coefficient. It is ideal for industrial applications requiring precise resistance adjustments in a compact package with a wide operating temperature range of -40 to 85 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,734 parts In-Stock

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Digiode

USA . 1,675 parts In-Stock

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1,675

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Distributors (Availability)

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Native Components

USA . 235 parts In-Stock

1+ parts

$0.039

100+ parts

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$0.037

235

$0.039

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$0.037

AZTECH Wire

Italy . 820 parts In-Stock

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$15.320

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820

$15.320

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Perfect Parts

USA . 18,170 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,177 parts In-Stock

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16,177

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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12,000

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TANS Electronics

Latvia . 5,882 parts In-Stock

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5,882

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Kulean Microsystems

USA . 5,165 parts In-Stock

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Microchip USA

USA . 5,051 parts In-Stock

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SupplyDigital Components

Austria . 4,278 parts In-Stock

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Northwest PG Solutions

USA . 1,552 parts In-Stock

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Corphita

USA . 1,229 parts In-Stock

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Problanco Electronics

Mexico . 522 parts In-Stock

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522

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UHIMA Technologies

Türkiye . 480 parts In-Stock

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Corohmni

South Africa . 144 parts In-Stock

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Overview

Enhance your electronic designs with the CAT5140ZI-00-GT3 by Onsemi, a high-quality digital potentiometer that offers precise resistance adjustment for optimal performance. Onsemi's reputation for reliability and innovation shines through in this product, making it an ideal choice for a wide range of applications in industries such as telecommunications, automotive, and consumer electronics. With its compact design, versatile control interface, and superior temperature coefficient, the CAT5140ZI-00-GT3 delivers exceptional value and flexibility to customers looking to elevate their products to the next level. Experience the benefits of seamless integration and unmatched performance with this cutting-edge digital potentiometer from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying assembly.

Nominal Temperature Coefficient: 100 ppm/°C

With a low temperature coefficient, the product provides stable and accurate performance over a wide temperature range.

Control Interface: 2-WIRE SERIAL

The 2-wire serial control interface offers easy and efficient communication with the digital potentiometer, making it user-friendly.

Nominal Total Resistance: 100000 ohm

The high nominal total resistance allows for precise and fine adjustments of resistance in the circuit.

Maximum Resistor Terminal Voltage: 5.5 V

The high maximum resistor terminal voltage ensures compatibility with a wide range of circuits and applications.

Power Supplies (V): 3/5

The flexibility to operate at 3V or 5V power supplies makes the product versatile and compatible with various systems.

No. of Terminals: 8

Having 8 terminals allows for more connection options and configurations in the circuit.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature makes the product suitable for industrial applications where it may be exposed to high temperatures.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the product can function reliably even in extreme cold environments.

Technical Specifications

Digital Potentiometers (DigiPOT) CAT5140ZI-00-GT3 attributes and parameters. Explore more Digital Potentiometers (DigiPOT) devices from Onsemi

Converter Specifications

Sub-Category:

Digital Potentiometers

Resistance Law:

Linear

Nominal Total Resistance:

100 KΩ

Control Interface:

2-Wire Serial

No. of Functions:

1

Maximum Resistance Tolerance:

20 %

Additional Features:

Nonvolatile memory

Electrical Characteristics

Nominal Supply Voltage:

3.3 V

Minimum Resistor Terminal Voltage:

0 V

Maximum Resistor Terminal Voltage:

5.5 V

Operating Conditions

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Nominal Temperature Coefficient:

100 ppm/°C

Moisture Sensitivity Level (MSL):

1

Form Factor

Terminal Form:

Terminal Position:

Dual

No. of Terminals:

8

Terminal Finish:

Nickel/Palladium/Gold

Terminal Pitch:

0.026 in (0.65 mm)

No. of Positions:

256

Maximum Seated Height:

0.043 in (1.1 mm)

Width:

0.118 in (3 mm)

Length:

0.118 in (3 mm)

Packaging

Package Shape:

Package Body Material:

Plastic/Epoxy

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Code:

Package Equivalence Code:

TSSOP8,.19

Standards and Codes

Qualified:

No

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Trade Compliance

CAT5140ZI-00-GT3 Converters trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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