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CAT25AM02C8ATR

Onsemi

CAT25AM02C8ATR by Onsemi

CAT25AM02C8ATR by Onsemi is a 256KX16 EEPROM with 262144 words memory width. It operates at 2.5V, has a clock frequency of 5 MHz, and uses SPI serial bus type. Ideal for applications requiring low power consumption and high-speed data transfer in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,917 parts In-Stock

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Digiode

USA . 2,462 parts In-Stock

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Native Components

USA . 205 parts In-Stock

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$0.668

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$0.668

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Northwest PG Solutions

USA . 935 parts In-Stock

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$0.735

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935

$0.735

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AZTECH Wire

Italy . 61 parts In-Stock

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$9.770

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61

$9.770

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QUARKTWIN TECHNOLOGY LTD

USA . 23,688 parts In-Stock

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SupplyDigital Components

Austria . 8,265 parts In-Stock

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TANS Electronics

Latvia . 7,758 parts In-Stock

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Microchip USA

USA . 3,816 parts In-Stock

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Kulean Microsystems

USA . 1,333 parts In-Stock

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Problanco Electronics

Mexico . 862 parts In-Stock

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Corphita

USA . 441 parts In-Stock

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UHIMA Technologies

Türkiye . 407 parts In-Stock

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Corohmni

South Africa . 186 parts In-Stock

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Overview

Unlock endless possibilities with the CAT25AM02C8ATR EEPROM from Onsemi. Known for their high-quality and reliable products, Onsemi delivers top-notch performance in a compact package. Ideal for a wide range of applications, this EEPROM offers customers value, reliability, and flexibility. Experience the benefits of seamless data storage and retrieval, enhanced system functionality, and increased efficiency with the CAT25AM02C8ATR by Onsemi. Elevate your projects with this innovative solution today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the EEPROM, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for efficient data transfer and processing, optimizing performance.

Nominal Supply Voltage / Vsup (V): 2.5

Operating at 2.5V provides low power consumption, making it suitable for battery-operated devices.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, it can withstand high temperature environments, ensuring reliability.

Memory Width: 16

Having a memory width of 16 allows for efficient data storage and retrieval, accommodating a wide range of applications.

Technical Specifications

EEPROM CAT25AM02C8ATR attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

5 MHz

JESD-30 Code:

R-PBGA-B8

JESD-609 Code:

e2

Length:

3.12 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

SERIAL

Maximum Seated Height:

.37 mm

Serial Bus Type:

SPI

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.6 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Width:

2.04 mm

Maximum Write Cycle Time (tWC):

10 ms

Trade Compliance

CAT25AM02C8ATR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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