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CAT2300VP2-GT3

Onsemi

CAT2300VP2-GT3 by Onsemi

CAT2300VP2-GT3 by Onsemi is a MOSFET Gate Driver with 8 terminals, operating voltage range of 4.5-5.5V, and temperature range of -40 to 85 °C. It features a small outline package suitable for industrial applications requiring high side drivers in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,521 parts In-Stock

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Digiode

USA . 2,022 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 152 parts In-Stock

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$1.983

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$1.983

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Northwest PG Solutions

USA . 2,053 parts In-Stock

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$2.181

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AZTECH Wire

Italy . 946 parts In-Stock

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$20.350

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Kulean Microsystems

USA . 8,030 parts In-Stock

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SupplyDigital Components

Austria . 7,428 parts In-Stock

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Problanco Electronics

Mexico . 7,327 parts In-Stock

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TANS Electronics

Latvia . 3,996 parts In-Stock

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UHIMA Technologies

Türkiye . 416 parts In-Stock

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Microchip USA

USA . 384 parts In-Stock

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Corohmni

South Africa . 297 parts In-Stock

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Corphita

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Overview

Unleash the power of efficiency and reliability with the CAT2300VP2-GT3 MOSFET Gate Driver by Onsemi. This top-quality product is designed to provide superior performance and durability, making it ideal for a wide range of applications. With its advanced features and precise engineering, this gate driver offers unmatched value and benefits to customers looking for a high-performing solution. Trust in Onsemi's reputation for excellence and invest in the CAT2300VP2-GT3 for all your gate driver needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer product lifespan.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving time and effort during assembly.

Maximum Supply Voltage: 5.5 V

Supports a wide range of applications without risk of overloading the device.

Package Shape: RECTANGULAR

Enables compact and efficient design integration within electronic systems.

No. of Terminals: 8

Provides ample connectivity options for interfacing with external components.

Minimum Supply Voltage: 4.5 V

Operates effectively even at lower voltage levels, increasing versatility in usage scenarios.

Maximum Operating Temperature: 85 °C

Ensures reliable performance under varying temperature conditions, suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold temperatures, expanding its usability in harsh environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides corrosion resistance and good conductivity for efficient signal transmission.

Maximum Seated Height: 0.8 mm

Low profile design saves space and allows for more compact device configurations.

Width: 2 mm

Compact size enables easy integration into tight spaces on PCBs or within electronic systems.

High Side Driver: YES

Enables the driving of high-side power MOSFETs, offering versatile control options for various applications.

Length: 3 mm

Optimal length for a balance between space-saving and efficient component placement on PCBs.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments, ensuring long-term reliability under demanding conditions.

Terminal Form: NO LEAD

Lead-free construction compliant with environmental regulations and safer for handling and disposal.

Nominal Supply Voltage: 5 V

Standard voltage compatibility for easy integration into existing electronic systems and circuits.

Terminal Pitch: 0.5 mm

Fine pitch allows for high-density mounting on PCBs, enabling more connections in a limited space.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Flexible interface options for driving MOSFETs, providing compatibility with various control systems and applications.

Technical Specifications

MOSFET Gate Drivers CAT2300VP2-GT3 attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

2 mm

Trade Compliance

CAT2300VP2-GT3 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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