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BZX85C36-T50R

Onsemi

BZX85C36-T50R by Onsemi

BZX85C36-T50R by Onsemi is a Zener diode with 36V nominal reference voltage, 8mA test current, and 5% voltage tolerance. It is used in applications requiring stable voltage regulation like power supplies and voltage references.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,769 parts In-Stock

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Digiode

USA . 1,392 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Ampacity Inc.

Singapore . 1,425 parts In-Stock

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$0.010

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$0.010

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AZTECH Wire

Italy . 503 parts In-Stock

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$16.810

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503

$16.810

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Problanco Electronics

Mexico . 7,955 parts In-Stock

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Continental Prestige Electronics

USA . 5,841 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 4,079 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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SupplyDigital Components

Austria . 1,898 parts In-Stock

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TANS Electronics

Latvia . 1,742 parts In-Stock

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Kulean Microsystems

USA . 970 parts In-Stock

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UHIMA Technologies

Türkiye . 868 parts In-Stock

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Corphita

USA . 436 parts In-Stock

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Corohmni

South Africa . 308 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Discover the reliable performance and quality craftsmanship of the BZX85C36-T50R Zener Diode by Onsemi. Manufactured with precision and expertise, this diode is designed to provide stable voltage regulation in a variety of applications. From power supplies to voltage references, this diode offers unmatched value and benefits to customers seeking consistent and efficient performance. Trust in Onsemi's reputation for excellence and choose the BZX85C36-T50R for your next project.

Feature Benefit Bullets

Package Body Material: GLASS

The glass package provides durability and protection to the zener diode, making it suitable for a wide range of applications.

Working Test Current: 8 mA

The 8 mA working test current ensures reliable performance under normal operating conditions.

Maximum Voltage Tolerance: 5 %

With a maximum voltage tolerance of 5%, this zener diode provides stable and accurate voltage regulation.

Maximum Power Dissipation: 1 W

The high maximum power dissipation of 1 W allows the zener diode to handle high power loads without overheating.

Nominal Reference Voltage: 36 V

The 36 V nominal reference voltage makes this zener diode suitable for applications requiring precise voltage regulation.

Technical Specifications

Zener Diodes BZX85C36-T50R attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-204AL

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

36 V

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

8 mA

Trade Compliance

BZX85C36-T50R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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