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BZX84C8V2ET3

Onsemi

BZX84C8V2ET3 by Onsemi

BZX84C8V2ET3 by Onsemi is a Zener diode with a nominal reference voltage of 8.2V and max power dissipation of 0.25W. It operates in temperatures ranging from -65 to 150 °C and has a max voltage tolerance of 6.1%. This diode is commonly used in applications requiring precise voltage regulation, such as power supplies and voltage references.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 3,094 parts In-Stock

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Digiode

USA . 770 parts In-Stock

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AZTECH Wire

Italy . 529 parts In-Stock

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$19.100

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Component Stockers USA

USA . 790 parts In-Stock

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$99.990

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Native Components

USA . 451 parts In-Stock

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$200.190

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$192.182

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Northwest PG Solutions

USA . 1,959 parts In-Stock

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$220.209

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TANS Electronics

Latvia . 6,995 parts In-Stock

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Kulean Microsystems

USA . 3,297 parts In-Stock

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Corphita

USA . 2,444 parts In-Stock

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SupplyDigital Components

Austria . 1,894 parts In-Stock

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UHIMA Technologies

Türkiye . 413 parts In-Stock

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Corohmni

South Africa . 336 parts In-Stock

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Problanco Electronics

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Overview

Discover the reliable and high-quality BZX84C8V2ET3 Zener Diode by Onsemi, a leading manufacturer in the industry. This versatile component is ideal for a wide range of applications, providing excellent voltage regulation and protection. With its small outline package style and dual terminal position, this Zener diode offers convenience and ease of use. Trust Onsemi to deliver top-notch products that meet UL standards and exceed expectations. Upgrade your designs with the BZX84C8V2ET3 for superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the zener diode, ensuring longevity and reliable performance.

Working Test Current: 5 mA

With a working test current of 5 mA, this zener diode can handle sufficient current to meet various application requirements.

Surface Mount: YES

Being surface mountable allows for easy assembly onto circuit boards, saving space and simplifying manufacturing processes.

Maximum Voltage Tolerance: 6.1 %

A low maximum voltage tolerance of 6.1% ensures accurate voltage regulation, making this zener diode suitable for precision electronics.

Maximum Power Dissipation: 0.25 W

The high maximum power dissipation of 0.25 W enables the zener diode to handle power efficiently without overheating.

Nominal Reference Voltage: 8.2 V

The 8.2 V nominal reference voltage makes this zener diode ideal for applications requiring a stable and precise voltage reference.

Technical Specifications

Zener Diodes BZX84C8V2ET3 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

15 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Knee Impedance:

80 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

8.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

6.1 %

Working Test Current:

5 mA

Trade Compliance

BZX84C8V2ET3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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