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BZX84C5V1ET1

Onsemi

BZX84C5V1ET1 by Onsemi

BZX84C5V1ET1 by Onsemi is a Zener diode with 5.1V nominal reference voltage, 480 ohm knee impedance, and 150 °C max operating temp. Ideal for voltage regulation in electronic circuits due to its small outline package and unidirectional polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Semi Source

USA . 4,565 parts In-Stock

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Vyrian

USA . 4,222 parts In-Stock

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Digiode

USA . 1,026 parts In-Stock

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Native Components

USA . 798 parts In-Stock

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$1.402

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Northwest PG Solutions

USA . 1,291 parts In-Stock

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$1.542

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AZTECH Wire

Italy . 131 parts In-Stock

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$13.310

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Component Stockers USA

USA . 206 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 7,035 parts In-Stock

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SupplyDigital Components

Austria . 5,637 parts In-Stock

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Kulean Microsystems

USA . 3,489 parts In-Stock

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Problanco Electronics

Mexico . 1,188 parts In-Stock

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Corphita

USA . 656 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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UHIMA Technologies

Türkiye . 388 parts In-Stock

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Overview

Unlock the power of precision with the BZX84C5V1ET1 Zener Diode by Onsemi. Known for their exceptional quality and reliability, Onsemi offers a wide range of applications for their Zener diode products. With a focus on performance and efficiency, this Zener diode provides customers with unparalleled value and benefits. Trust in Onsemi to deliver cutting-edge technology that meets your needs, whether you're in the automotive, industrial, or consumer electronics industry. Elevate your projects with the BZX84C5V1ET1 and experience the difference Onsemi can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the diode, making it durable and reliable.

Working Test Current: 5 mA

The low working test current ensures efficient performance and minimal power consumption.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and reducing installation time.

Maximum Voltage Tolerance: 5.88 %

Ensures accurate and stable voltage regulation, making it suitable for precision applications.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without degradation in performance.

Nominal Reference Voltage: 5.1 V

Provides a stable reference voltage, making it ideal for voltage regulation in various electronic circuits.

Technical Specifications

Zener Diodes BZX84C5V1ET1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

60 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Knee Impedance:

480 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

5.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.88 %

Working Test Current:

5 mA

Trade Compliance

BZX84C5V1ET1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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