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BZX84C3V3ET3G

Onsemi

BZX84C3V3ET3G by Onsemi

BZX84C3V3ET3G by Onsemi is a Zener diode with 3.3V nominal reference voltage, suitable for applications requiring a max power dissipation of 0.225W and operating temperatures ranging from -65 to 150 °C. It features a small outline package style, gull wing terminal form, and unidirectional polarity for surface mount configurations.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

10,000

-

$0.053

$0.044

$0.039

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.049

10,000

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-

-

$0.049

Distributors (In-Stock)

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Digiode

USA . 1,305 parts In-Stock

1+ parts

$0.041

100+ parts

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1,305

$0.041

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Vyrian

USA . 4,487 parts In-Stock

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4,487

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Distributors (Availability)

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Corphita

USA . 1,160 parts In-Stock

1+ parts

$0.039

100+ parts

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1,160

$0.039

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Corohmni

South Africa . 221 parts In-Stock

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$0.043

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221

$0.043

-

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Native Components

USA . 156 parts In-Stock

1+ parts

$0.075

100+ parts

-

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$0.072

156

$0.075

-

-

$0.072

Northwest PG Solutions

USA . 2,068 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

-

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$0.073

2,068

$0.083

-

-

$0.073

AZTECH Wire

Italy . 451 parts In-Stock

1+ parts

$9.570

100+ parts

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451

$9.570

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Continental Prestige Electronics

USA . 10,000 parts In-Stock

1+ parts

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$0.042

10,000

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$0.042

Kulean Microsystems

USA . 6,502 parts In-Stock

1+ parts

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6,502

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Problanco Electronics

Mexico . 6,438 parts In-Stock

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6,438

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TANS Electronics

Latvia . 3,375 parts In-Stock

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3,375

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SupplyDigital Components

Austria . 764 parts In-Stock

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764

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UHIMA Technologies

Türkiye . 387 parts In-Stock

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387

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Overview

Unleash the power of precision with the BZX84C3V3ET3G Zener Diode by Onsemi. Crafted with excellence, this small outline package delivers reliability and exceptional performance in a variety of applications. From voltage regulation to circuit protection, this UL Recognized diode offers a nominal reference voltage of 3.3V with a maximum voltage tolerance of 6.06%. Say goodbye to instability and hello to consistent results with Onsemi's cutting-edge technology. Elevate your projects with the quality and value of the BZX84C3V3ET3G Zener Diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the Zener diode lightweight and durable, suitable for various applications.

Working Test Current: 5 mA

With a working test current of 5 mA, this Zener diode can reliably regulate voltage within the specified range.

Surface Mount: YES

Being surface mountable, this Zener diode is easy to install on circuit boards, saving space and facilitating mass production.

Maximum Power Dissipation: 0.225 W

The maximum power dissipation of 0.225 W ensures that the Zener diode can handle high power loads without overheating or failing.

Nominal Reference Voltage: 3.3 V

The 3.3 V nominal reference voltage of this Zener diode provides a stable reference point for voltage regulation in electronic circuits.

Technical Specifications

Zener Diodes BZX84C3V3ET3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Additional Features:

UL RECOGNIZED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

95 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Maximum Knee Impedance:

600 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Maximum Voltage Tolerance:

6.06 %

Working Test Current:

5 mA

Trade Compliance

BZX84C3V3ET3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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