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BZX84C3V3ET1G

Onsemi

BZX84C3V3ET1G by Onsemi

BZX84C3V3ET1G by Onsemi is a Zener diode with a nominal reference voltage of 3.3V, max power dissipation of 0.225W, and working test current of 5mA. It is ideal for applications requiring precise voltage regulation in compact electronic circuits due to its small outline package style and unidirectional polarity.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 7,639 parts In-Stock

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Prism Electronics

USA . 2,874 parts In-Stock

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Digiode

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Native Components

USA . 34 parts In-Stock

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$7.601

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AZTECH Wire

Italy . 818 parts In-Stock

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SupplyDigital Components

Austria . 7,067 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Corphita

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Northwest PG Solutions

USA . 1,284 parts In-Stock

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TANS Electronics

Latvia . 1,035 parts In-Stock

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UHIMA Technologies

Türkiye . 674 parts In-Stock

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Perfect Parts

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Corohmni

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Overview

Discover the BZX84C3V3ET1G by Onsemi, a high-quality Zener Diode that provides reliable voltage regulation for various electronic applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this Zener Diode offers precision and efficiency in a compact package. From voltage stabilization in power supplies to signal conditioning in communication systems, this versatile component ensures optimal performance and protection for your circuit designs. Experience the value and benefits of the BZX84C3V3ET1G, where quality meets innovation for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring it can withstand various environmental conditions.

Working Test Current: 5 mA

The low working test current allows for efficient operation and helps in conserving power.

Surface Mount: YES

The surface mount feature makes it easy to integrate the diode onto circuit boards, saving space and simplifying the manufacturing process.

Maximum Voltage Tolerance: 6.06 %

The tight voltage tolerance ensures precise regulation of voltage in electronic circuits, leading to stable performance.

Maximum Power Dissipation: 0.225 W

With a relatively high maximum power dissipation, this diode can handle a certain level of power load without overheating or failing.

Nominal Reference Voltage: 3.3 V

The specific reference voltage of 3.3V makes this diode suitable for applications that require a constant voltage drop across the circuit.

Technical Specifications

Zener Diodes BZX84C3V3ET1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Additional Features:

UL RECOGNIZED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

95 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Maximum Knee Impedance:

600 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Maximum Voltage Tolerance:

6.06 %

Working Test Current:

5 mA

Trade Compliance

BZX84C3V3ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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