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BZX84C12ET3

Onsemi

BZX84C12ET3 by Onsemi

BZX84C12ET3 by Onsemi is a Zener diode with 12V nominal reference voltage, suitable for applications requiring a max power dissipation of 0.25W. It has a working test current of 5mA and operates within a temperature range of -65 to 150 °C. Ideal for use in circuits where precise voltage regulation is needed.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,949 parts In-Stock

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Digiode

USA . 2,142 parts In-Stock

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Native Components

USA . 52 parts In-Stock

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$5.310

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52

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AZTECH Wire

Italy . 764 parts In-Stock

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$15.180

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QUARKTWIN TECHNOLOGY LTD

USA . 15,676 parts In-Stock

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Problanco Electronics

Mexico . 7,020 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 2,538 parts In-Stock

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Corphita

USA . 1,785 parts In-Stock

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SupplyDigital Components

Austria . 1,580 parts In-Stock

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Kulean Microsystems

USA . 1,204 parts In-Stock

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UHIMA Technologies

Türkiye . 832 parts In-Stock

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Northwest PG Solutions

USA . 462 parts In-Stock

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Corohmni

South Africa . 421 parts In-Stock

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Overview

Discover the power of the BZX84C12ET3 Zener Diode by Onsemi, a top-quality product known for its reliability and efficiency. Designed with precision and expertise, this diode offers exceptional performance in a variety of applications. From voltage regulation to signal processing, the possibilities are endless with the BZX84C12ET3. Trust in Onsemi's reputation for excellence and experience the value and benefits this product brings to your projects. Don't settle for anything less than the best - choose the BZX84C12ET3 for your next application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the diode, making it suitable for various applications.

Working Test Current: 5 mA

The low working test current of 5 mA ensures efficient operation and power consumption in the circuit.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on PCBs, saving space and facilitating automated assembly processes.

Maximum Voltage Tolerance: 5.39 %

The tight maximum voltage tolerance of 5.39% ensures precise and reliable voltage regulation in the circuit.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25 W, this Zener diode can handle power efficiently without overheating, improving its longevity and performance.

Technical Specifications

Zener Diodes BZX84C12ET3 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

25 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Maximum Knee Impedance:

150 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.39 %

Working Test Current:

5 mA

Trade Compliance

BZX84C12ET3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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