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BZX84C10LT3G

Onsemi

BZX84C10LT3G by Onsemi

BZX84C10LT3G by Onsemi is a Zener diode with 10V nominal reference voltage, 5mA test current, and 20 ohm dynamic impedance. It is a small outline package suitable for applications requiring unidirectional polarity protection in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,373 parts In-Stock

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Digiode

USA . 1,185 parts In-Stock

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A2Z Electronics, Inc.

USA . 500 parts In-Stock

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Native Components

USA . 737 parts In-Stock

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$0.063

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737

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$0.061

Northwest PG Solutions

USA . 2,036 parts In-Stock

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$0.070

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$0.061

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$0.061

AZTECH Wire

Italy . 1,175 parts In-Stock

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$21.420

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Component Stockers USA

USA . 298 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 27,000 parts In-Stock

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TANS Electronics

Latvia . 4,464 parts In-Stock

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Problanco Electronics

Mexico . 3,517 parts In-Stock

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SupplyDigital Components

Austria . 2,968 parts In-Stock

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Kulean Microsystems

USA . 1,041 parts In-Stock

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Corohmni

South Africa . 327 parts In-Stock

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Corphita

USA . 226 parts In-Stock

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UHIMA Technologies

Türkiye . 37 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the BZX84C10LT3G Zener Diode. This versatile component is perfect for a wide range of applications, offering customers peace of mind knowing they are working with a trusted manufacturer. With a nominal reference voltage of 10V and maximum power dissipation of 0.225W, this diode provides excellent performance and efficiency. Trust Onsemi to deliver top-notch products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection for the internal components, ensuring durability and longevity of the zener diode.

Working Test Current: 5 mA

The low working test current of 5 mA helps in reducing power consumption and heat generation, making the product energy-efficient.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Maximum Voltage Tolerance: 6%

The tight voltage tolerance of 6% ensures accurate voltage regulation, making this zener diode suitable for precision electronic applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this zener diode can withstand elevated temperatures without compromising its performance.

Maximum Dynamic Impedance: 20 ohm

The low dynamic impedance of 20 ohm allows for efficient current regulation and stable operation under varying load conditions.

Terminal Finish: TIN

The tin terminal finish offers good solderability and corrosion resistance, ensuring reliable electrical connections.

Nominal Reference Voltage: 10 V

The 10 V nominal reference voltage provides consistent and precise voltage regulation, making this zener diode suitable for a wide range of applications.

Technical Specifications

Zener Diodes BZX84C10LT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

20 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

10 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

6 %

Working Test Current:

5 mA

Trade Compliance

BZX84C10LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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