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BZX84B5V1LT1

Onsemi

BZX84B5V1LT1 by Onsemi

BZX84B5V1LT1 by Onsemi is a Zener diode with 5.1V nominal reference voltage and 60 ohm max dynamic impedance. It is a small outline, single-configured diode with tin lead terminal finish, suitable for applications requiring precise voltage regulation in compact electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,940 parts In-Stock

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Digiode

USA . 2,013 parts In-Stock

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AZTECH Wire

Italy . 1,085 parts In-Stock

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$9.580

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Native Components

USA . 192 parts In-Stock

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$16.275

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Northwest PG Solutions

USA . 1,889 parts In-Stock

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$17.902

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$16.112

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$17.902

$16.112

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TANS Electronics

Latvia . 5,740 parts In-Stock

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5,740

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Problanco Electronics

Mexico . 4,655 parts In-Stock

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SupplyDigital Components

Austria . 2,085 parts In-Stock

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Corohmni

South Africa . 467 parts In-Stock

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Kulean Microsystems

USA . 460 parts In-Stock

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Corphita

USA . 435 parts In-Stock

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UHIMA Technologies

Türkiye . 188 parts In-Stock

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Overview

Discover the powerful BZX84B5V1LT1 Zener diode by Onsemi, a top-quality manufacturer known for its reliable electronic components. This small outline rectanglular package offers customers a voltage tolerance of 1.96% and a nominal reference voltage of 5.1V, making it ideal for a wide range of applications. With a maximum power dissipation of 0.225W and a peak reflow temperature of 235 °C, this diode provides exceptional performance and durability. Trust Onsemi's innovative technology to deliver the best value and benefits for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package durable and resistant to environmental factors, increasing the overall reliability of the product.

Working Test Current: 5 mA

With a working test current of 5 mA, this Zener diode can efficiently regulate voltage within its rated range, ensuring stable performance.

Surface Mount: YES

Being surface mountable, this Zener diode can be easily integrated into compact electronic designs, saving space and simplifying assembly.

Maximum Voltage Tolerance: 1.96 %

The low maximum voltage tolerance of 1.96% ensures precise voltage regulation, making this Zener diode suitable for applications requiring tight voltage control.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this Zener diode can withstand high temperatures, making it suitable for use in various industrial environments.

Maximum Dynamic Impedance: 60 ohm

The low maximum dynamic impedance of 60 ohms allows for efficient voltage regulation and minimal power loss, enhancing the overall performance of the diode.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, ensuring reliable electrical connections for optimal performance.

Nominal Reference Voltage: 5.1 V

With a nominal reference voltage of 5.1V, this Zener diode can provide stable voltage regulation at the specified level, making it ideal for various voltage control applications.

Technical Specifications

Zener Diodes BZX84B5V1LT1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

60 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

5.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

1.96 %

Working Test Current:

5 mA

Trade Compliance

BZX84B5V1LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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