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BZX79C12

Onsemi

BZX79C12 by Onsemi

BZX79C12 by Onsemi is a Zener diode with 12V nominal reference voltage, 5% max voltage tolerance, and 25 ohm max dynamic impedance. It is used in applications requiring precise voltage regulation like power supplies and voltage references.

Median Price

$0.039

Lifecycle Status

Suppliers In-Stock

49

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 41,852 parts In-Stock

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Chip1Stop

Japan . 1 parts In-Stock

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Distrelec

Netherlands . 146 parts In-Stock

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$0.054

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$0.033

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$0.022

146

$0.054

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$0.022

Mouser Electronics

USA . 18,267 parts In-Stock

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$0.210

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$0.079

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18,267

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$0.079

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$0.038

Rochester

USA . 92,405 parts In-Stock

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DigiKey

USA . 70,599 parts In-Stock

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Arrow

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Verical

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Master Electronics

USA . 35,000 parts In-Stock

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RS (Exports)

UK . 16,000 parts In-Stock

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Farnell

UK . 14,485 parts In-Stock

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Element14

Singapore . 14,485 parts In-Stock

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Digiode

USA . 7,285 parts In-Stock

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Nova Conductors

Japan . 1,067 parts In-Stock

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TEDSS.com

USA . 800 parts In-Stock

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TME

Poland . 1,243 parts In-Stock

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$0.042

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$0.035

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1,243

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$0.042

$0.035

$0.032

Component Electronics Inc.

Canada . 75 parts In-Stock

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American Microsemiconductor Inc.

USA . 8 parts In-Stock

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ComSIT USA

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IBS Electronics

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ECAB

Sweden . 32,276 parts In-Stock

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Cogito LLC

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Sensible Micro Corp

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Component Sense

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LWI Electronics Inc

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Pegasus Components GmbH

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Semicontronic

India . 28,653 parts In-Stock

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Ampacity Inc.

Singapore . 28,516 parts In-Stock

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Corohmni

South Africa . 238 parts In-Stock

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Corphita

USA . 5,126 parts In-Stock

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AZTECH Wire

Italy . 10,662 parts In-Stock

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IDEA Electronic Components Group

UK . 2,305 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Continental Prestige Electronics

USA . 63,970 parts In-Stock

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Argo Parts USA

USA . 9,043 parts In-Stock

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MKK Technologies

India . 472 parts In-Stock

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DigiPath Technology Company

USA . 472 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,847 parts In-Stock

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Kepictronics

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Cyclops Electronics Ltd (Excess)

UK . 38,892 parts In-Stock

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Authorized Procurement Solutions

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Canada . 30,000 parts In-Stock

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Perfect Parts

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Spain . 16,677 parts In-Stock

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Lixinc

USA . 15,609 parts In-Stock

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Mexico . 6,057 parts In-Stock

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UK . 3,700 parts In-Stock

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Latvia . 3,275 parts In-Stock

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Netroflash

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Parana Technologies

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UHIMA Technologies

Türkiye . 440 parts In-Stock

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Israel . 150 parts In-Stock

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Overview

Unlock the power of precision with the BZX79C12 Zener diode by Onsemi. Crafted with top-notch quality and expertise, this diode offers unparalleled performance and reliability for a wide range of applications. From voltage regulation to circuit protection, this product delivers value and peace of mind to customers seeking high-quality electronic components. Trust in Onsemi's reputation for excellence and experience the benefits of superior technology with the BZX79C12 Zener diode.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass material provides high reliability and durability to the Zener diode.

Config: SINGLE

The single configuration simplifies the circuit design and installation process, making it ideal for various applications.

Working Test Current: 5 mA

With a low working test current requirement, this Zener diode ensures energy efficiency and optimal performance.

Package Shape: ROUND

The round shape of the package allows for easy mounting and handling in electronic circuits.

No. of Terminals: 2

Having two terminals simplifies the wiring and connection process, making this Zener diode user-friendly.

Package Style (Meter): LONG FORM

The long-form package style provides better heat dissipation and protection for the diode, ensuring long-term reliability.

Maximum Voltage Tolerance: 5 %

Offers a tight voltage tolerance range for precise voltage regulation in various electronic devices.

Maximum Operating Temperature: 200 °C

The wide temperature range allows this Zener diode to function effectively in extreme environmental conditions.

Maximum Dynamic Impedance: 25 ohm

Low dynamic impedance ensures stable and efficient voltage regulation in the circuit.

Minimum Operating Temperature: -65 °C

Able to operate at extremely low temperatures, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides excellent solderability and corrosion resistance for reliable connections.

Terminal Position: AXIAL

Axial terminal position simplifies PCB layout and installation, making it a convenient choice for designers.

Case Connection: ISOLATED

Isolated case connection improves safety and prevents electrical interference in the circuit.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5W, this Zener diode can handle high power loads without overheating.

Diode Type: ZENER DIODE

Being a Zener diode, it offers precise voltage regulation and protection against voltage spikes in the circuit.

Nominal Reference Voltage: 12 V

The 12V nominal reference voltage ensures stable voltage output for various electronic applications.

Technology: ZENER

Utilizes Zener technology for accurate voltage regulation and protection, making it a reliable choice for electronic circuits.

Terminal Form: WIRE

Wire terminal form allows for easy connection and installation, making it suitable for both hobbyists and professionals.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the Zener diode conducts current in one direction, providing efficient voltage regulation.

Diode Element Material: SILICON

Made from silicon, this Zener diode offers high efficiency and reliability in voltage regulation applications.

Technical Specifications

Zener Diodes BZX79C12 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

25 ohm

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZX79C12 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5365-14-350-5888, 5365143505888, 5961-00-551-9458, 5961005519458, 5961-13-111-1782, 5961131111782, 5961-15-105-8813, 5961151058813, 5961-66-071-8367, 5961660718367, 5961-99-775-1551, 5961997751551, 5961-99-790-6520, 5961997906520

NIIN

143505888, 005519458, 131111782, 151058813, 660718367, 997751551, 997906520

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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