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BTD4M

Onsemi

BTD4M by Onsemi

BTD4M by Onsemi is a DIAC diode with 5V max on-state voltage, 3V repetitive peak reverse voltage, and 125 °C max operating temp. It serves as a trigger device with 0.05mA max holding current and 37V max breakdown voltage. Ideal for AC circuits requiring precise triggering capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,482 parts In-Stock

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Digiode

USA . 2,123 parts In-Stock

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Problanco Electronics

Mexico . 6,318 parts In-Stock

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TANS Electronics

Latvia . 4,324 parts In-Stock

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Kulean Microsystems

USA . 3,865 parts In-Stock

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Corphita

USA . 1,204 parts In-Stock

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Northwest PG Solutions

USA . 636 parts In-Stock

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SupplyDigital Components

Austria . 630 parts In-Stock

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Native Components

USA . 347 parts In-Stock

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UHIMA Technologies

Türkiye . 230 parts In-Stock

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Corohmni

South Africa . 172 parts In-Stock

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Overview

Looking for a reliable and high-quality DIAC? Look no further than the BTD4M by Onsemi. With a reputation for excellence in semiconductor manufacturing, Onsemi delivers top-notch products that meet the needs of various applications. The BTD4M is perfect for controlling alternating current circuits, offering a maximum on-state voltage of 5V and a repetitive peak reverse voltage of 3V. Trust Onsemi to provide you with a superior DIAC that offers value, benefits, and advantages that will enhance your projects. Choose the BTD4M for quality you can rely on.

Feature Benefit Bullets

Maximum On-state Voltage: 5 V

Low on-state voltage ensures efficient conduction of alternating current, resulting in minimal power loss and optimal performance.

Repetitive Peak Reverse Voltage: 3 V

Low reverse voltage ensures reliable operation and protection against reverse polarity, making it suitable for various applications.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for stable performance even in challenging environments, ensuring durability and reliability.

Trigger Device Type: DIAC

Being a DIAC trigger device provides precise control over the switching characteristics, making it ideal for applications requiring accurate triggering.

Maximum Holding Current: 0.05 mA

Low holding current ensures efficient operation and minimal power consumption, making it energy-efficient and cost-effective.

Maximum Breakdown Voltage: 37 V

High breakdown voltage provides protection against overvoltage conditions, ensuring the safety and longevity of the product and the connected components.

Technical Specifications

Diode For Alternating Current (DIAC) BTD4M attributes and parameters. Explore more Diode For Alternating Current (DIAC) devices from Onsemi

Specs

Maximum Breakdown Voltage:

37 V

Maximum Holding Current:

.05 mA

Maximum On-state Voltage:

5 V

Maximum Operating Temperature:

125 Cel

Repetitive Peak Reverse Voltage:

3 V

Sub-Category:

DIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

BTD4M Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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