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BAWH56WT1G

Onsemi

BAWH56WT1G by Onsemi

BAWH56WT1G by Onsemi is a common anode diode with 2 elements, featuring a max reverse recovery time of 0.006 us and max reverse current of 2.5 uA. Ideal for rectification applications in electronics, this small outline diode operates b/w -55 to 175 °C with a breakdown voltage of 70 V.

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Overview

Discover the power of the BAWH56WT1G diode by Onsemi, a high-quality component designed for a wide range of applications. With its common anode configuration and small outline package style, this diode offers fast reverse recovery time and low reverse current. Ideal for use in various electronic devices, the BAWH56WT1G provides customers with reliable performance, efficiency, and durability. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits this diode brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode lightweight and durable, ensuring easy handling during installation and good reliability in various operating conditions.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for efficient voltage regulation and current control, making the diode suitable for a wide range of applications.

Surface Mount: YES

Being surface mountable, this diode is quick and easy to install on PCBs, saving space and enabling automated manufacturing processes.

Maximum Reverse Recovery Time: 0.006 us

The extremely low reverse recovery time of 0.006 microseconds ensures minimal energy loss and fast switching speed, making this diode ideal for high-frequency circuits.

Maximum Reverse Current: 2.5 uA

With a low reverse current of 2.5 microamps, this diode offers excellent leakage performance, resulting in more efficient power conversion and reduced standby power consumption.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and mounting on PCBs, optimizing space utilization and enhancing the overall design aesthetics of the electronic device.

Reverse Test Voltage: 70 V

The high reverse test voltage of 70 volts ensures reliable performance and protection against reverse voltage spikes, making this diode suitable for demanding applications that require a high breakdown voltage.

No. of Terminals: 3

The 3 terminals provide flexibility in circuit connections and allow for easy integration into electronic systems, enabling versatile usage and compatibility with a variety of components.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes the diode compact and space-saving, ideal for applications where board space is limited or where multiple components need to be densely packed.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175 °C ensures that the diode can withstand elevated temperatures without sacrificing performance, making it suitable for harsh environmental conditions and high-power applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C enables the diode to function reliably even in extreme cold conditions, ensuring consistent performance across a wide temperature range.

Terminal Position: DUAL

The dual terminal position allows for easy and secure connections, enhancing the reliability and stability of the electrical connection in various circuit configurations.

Maximum Power Dissipation: 0.2 W

The maximum power dissipation of 0.2 watts indicates the heat tolerance of the diode, ensuring efficient operation and preventing overheating that could damage the component or surrounding circuitry.

Minimum Breakdown Voltage: 70 V

The high minimum breakdown voltage of 70 volts provides robust protection against voltage surges and overloads, ensuring the long-term reliability and safety of the electronic system.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component is specifically designed for converting AC to DC and enabling efficient power supply regulation, making it a crucial component in many electronic devices and systems.

Maximum Forward Voltage (VF): 1.25 V

The low maximum forward voltage of 1.25 volts results in reduced power loss and improved energy efficiency during forward conduction, making the diode an excellent choice for applications where power conservation is critical.

Maximum Output Current: 0.1 A

The maximum output current of 0.1 ampere allows for reliable current flow and load handling, ensuring that the diode can support various electrical loads without overheating or performance degradation.

Terminal Form: GULL WING

The gull wing terminal form provides increased mechanical stability and easier soldering during assembly, enhancing the overall reliability and longevity of the diode in different operating conditions.

No. of Elements: 2

Having 2 elements in the diode structure allows for efficient current control and voltage regulation, enabling the diode to handle different electrical parameters and provide stable performance in diverse applications.

Maximum Repetitive Peak Reverse Voltage: 70 V

The high maximum repetitive peak reverse voltage of 70 volts ensures reliable reverse voltage protection and performance consistency, making this diode suitable for applications where reverse voltage spikes are common.

Maximum Non Repetitive Peak Forward Current: 2 A

The high maximum non-repetitive peak forward current capacity of 2 amperes allows the diode to handle short-duration current surges without damage, making it suitable for applications with varying load conditions.

Diode Element Material: SILICON

Being made of silicon, the diode element material offers high thermal conductivity, low power loss, and reliable performance characteristics, ensuring the diode's longevity and efficiency in demanding applications.

Technical Specifications

Diodes & Rectifiers BAWH56WT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

70 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.2 W

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Current:

2.5 uA

Maximum Reverse Recovery Time:

.006 us

Reverse Test Voltage:

70 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAWH56WT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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