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BAW76

Onsemi

BAW76 by Onsemi

BAW76 by Onsemi is a single rectifier diode with a max forward voltage of 1V and output current of 0.3A. Its glass package body material and isolated case connection make it suitable for high-temperature applications up to 175 °C, such as power supply circuits and signal processing systems.

Median Price

$0.009

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 7,900 parts In-Stock

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-

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$0.009

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$0.008

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$0.007

7,900

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$0.009

$0.008

$0.007

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Digiode

USA . 1,122 parts In-Stock

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$0.024

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Vyrian

USA . 53,278 parts In-Stock

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$0.025

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GES GmbH

Germany . 13,212 parts In-Stock

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R&J Components

USA . 9,928 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 7,952 parts In-Stock

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Anansix

USA . 2,584 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 1,969 parts In-Stock

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Pegasus Components GmbH

Germany . 1,650 parts In-Stock

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Sogenti Electronics

Canada . 1,416 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 1,272 parts In-Stock

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Manotoh

Italy . 670 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 500 parts In-Stock

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ECAB

Sweden . 350 parts In-Stock

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LittleDiode

UK . 174 parts In-Stock

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Huijzer Components

Netherlands . 100 parts In-Stock

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Ampacity Inc.

Singapore . 7,758 parts In-Stock

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$0.021

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Corphita

USA . 2,222 parts In-Stock

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$0.022

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Corohmni

South Africa . 125 parts In-Stock

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$0.025

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Component Stockers USA

USA . 488 parts In-Stock

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$99.990

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488

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RC Electronics

USA . 71,100 parts In-Stock

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$0.040

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Metaverse IC Inc.

Canada . 66,818 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,010 parts In-Stock

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Perfect Parts

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Assy Fe

Spain . 11,249 parts In-Stock

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SupplyDigital Components

Austria . 8,300 parts In-Stock

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TANS Electronics

Latvia . 7,145 parts In-Stock

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Problanco Electronics

Mexico . 4,744 parts In-Stock

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Supply Digital

USA . 1,699 parts In-Stock

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Native Components

USA . 917 parts In-Stock

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Glotronic Ltd.

UK . 898 parts In-Stock

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UHIMA Technologies

Türkiye . 606 parts In-Stock

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Northwest PG Solutions

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Kulean Microsystems

USA . 41 parts In-Stock

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Overview

Unlock the full potential of your electronic devices with the high-quality BAW76 diode by Onsemi. Manufactured to the highest standards, this rectifier diode offers unparalleled performance and reliability. Ideal for a wide range of applications, from power supplies to switching circuits, the BAW76 provides fast and efficient operation. With its low forward voltage and quick reverse recovery time, this diode delivers exceptional value and benefits to customers looking for top-notch components for their projects. Trust Onsemi to deliver excellence in every component, starting with the BAW76 diode.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides excellent protection for the diode, ensuring longevity and reliability in various operating conditions.

Maximum Reverse Recovery Time: 0.004 us

Fast reverse recovery time ensures efficient and quick switching of the diode, making it suitable for high-frequency applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance.

Maximum Power Dissipation: 0.5 W

Low power dissipation helps in improving the overall energy efficiency of the system where the diode is used.

Maximum Output Current: 0.3 A

Able to handle a maximum output current of 0.3 A, this diode is suitable for various low to medium power applications.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop ensures minimal voltage loss across the diode, leading to efficient power conversion.

Maximum Repetitive Peak Reverse Voltage: 50 V

With a high repetitive peak reverse voltage rating, this diode can handle reverse voltages without breakdown, ensuring reliable operation.

Technical Specifications

Diodes & Rectifiers BAW76 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

.3 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAW76 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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