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BAW74_D87Z

Onsemi

BAW74_D87Z by Onsemi

BAW74_D87Z by Onsemi is a common anode diode with 2 elements, featuring a max reverse recovery time of 0.004 us. This small outline rectifier diode has a max forward voltage of 1V and output current of 0.2A. Ideal for applications requiring fast switching speeds in electronic circuits.

Median Price

$0.041

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 90,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 90,000 parts In-Stock

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Rochester

USA . 9,340 parts In-Stock

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$0.039

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$0.032

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$0.029

9,340

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$0.039

$0.032

$0.029

Verical

USA . 9,340 parts In-Stock

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$0.041

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$0.041

Mouser Electronics

USA . 4,114 parts In-Stock

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$0.047

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$0.047

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Digiode

USA . 495 parts In-Stock

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$0.030

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495

$0.030

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Vyrian

USA . 2,571 parts In-Stock

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$0.032

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Flip Electronics

USA . 90,000 parts In-Stock

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DigiKey Marketplace

USA . 90,000 parts In-Stock

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Corphita

USA . 2,295 parts In-Stock

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$0.029

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$0.029

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Corohmni

South Africa . 132 parts In-Stock

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$0.032

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132

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Perfect Parts

USA . 33,600 parts In-Stock

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SupplyDigital Components

Austria . 6,712 parts In-Stock

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Kulean Microsystems

USA . 6,235 parts In-Stock

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Problanco Electronics

Mexico . 3,335 parts In-Stock

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TANS Electronics

Latvia . 3,177 parts In-Stock

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Northwest PG Solutions

USA . 2,005 parts In-Stock

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Supply Digital

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Native Components

USA . 650 parts In-Stock

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UHIMA Technologies

Türkiye . 539 parts In-Stock

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539

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Overview

Discover the superior quality and performance of the BAW74_D87Z diode by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch products that exceed expectations. Ideal for a range of applications, this diode offers unmatched reliability and efficiency. Experience the value and benefits of choosing Onsemi for your electronic components needs. Upgrade to the BAW74_D87Z today and see the difference for yourself!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan for the product.

Config: COMMON ANODE, 2 ELEMENTS

Common anode configuration with 2 elements allows for efficient voltage control and current flow in the circuit.

Surface Mount: YES

Easy to mount on circuit boards, saving time and making the installation process more convenient.

Maximum Reverse Recovery Time: 0.004 us

Quick reverse recovery time ensures efficient switching performance in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a variety of operating conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient current flow in one direction, essential for rectifying AC to DC.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop ensures minimal power loss and efficient operation.

Maximum Output Current: 0.2 A

Capable of handling a decent amount of current, suitable for various low to medium power applications.

Maximum Repetitive Peak Reverse Voltage: 50 V

Can handle up to 50 volts in the reverse direction, making it suitable for a wide range of voltage applications.

Technical Specifications

Diodes & Rectifiers BAW74_D87Z attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.35 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAW74_D87Z Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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