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ADP3611JRMZ-REEL

Onsemi

ADP3611JRMZ-REEL by Onsemi

ADP3611JRMZ-REEL by Onsemi is a MOSFET gate driver with 10 terminals, operating voltage range of 4.5V to 5.5V, and industrial temperature grade up to 85 °C. It features a small outline package style with thin profile and shrink pitch, suitable for high side driver applications requiring a max supply voltage of 5V. The interface IC type is buffer or inverter based MOSFET driver, making it ideal for surface mount designs in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 23,000 parts In-Stock

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Vyrian

USA . 12,223 parts In-Stock

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Digiode

USA . 738 parts In-Stock

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Native Components

USA . 86 parts In-Stock

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$0.867

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86

$0.867

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Northwest PG Solutions

USA . 239 parts In-Stock

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$0.954

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239

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AZTECH Wire

Italy . 146 parts In-Stock

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$20.320

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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Kulean Microsystems

USA . 4,643 parts In-Stock

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SupplyDigital Components

Austria . 3,937 parts In-Stock

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TANS Electronics

Latvia . 3,039 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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Kepictronics

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Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 914 parts In-Stock

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UHIMA Technologies

Türkiye . 815 parts In-Stock

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Corohmni

South Africa . 423 parts In-Stock

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Robosynatics

Brazil . 350 parts In-Stock

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350

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Lucentia Tech

USA . 350 parts In-Stock

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$10.640

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$9.853

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$9.853

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$9.853

Microchip USA

USA . 303 parts In-Stock

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Corphita

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Overview

Discover the Onsemi ADP3611JRMZ-REEL, a top-of-the-line MOSFET Gate Driver that offers superior quality and reliability. Manufactured by industry leader Onsemi, this product is designed for a wide range of applications, providing customers with unmatched performance and efficiency. With its innovative design and advanced features, the ADP3611JRMZ-REEL delivers exceptional value, benefits, and advantages to meet all your needs. Experience the difference with Onsemi's cutting-edge technology and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body ensures durability and reliability, making this MOSFET Gate Driver suitable for various applications.

Surface Mount: YES

Being surface mountable makes installation easier and provides flexibility in mounting options for the MOSFET Gate Driver.

Maximum Supply Voltage: 5.5 V

With a maximum supply voltage of 5.5V, this gate driver can handle higher power requirements, making it suitable for demanding applications.

Package Shape: SQUARE

The square package shape allows for efficient use of space on the circuit board, making it a compact and space-saving choice.

Power Supplies (V): 5

Operating at 5V makes this MOSFET Gate Driver compatible with standard power supplies, enhancing its usability in various electronics applications.

No. of Terminals: 10

The 10 terminals provide ample connection options, allowing for flexibility in wiring and integration with other components in the circuit.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style makes this gate driver suitable for compact designs and space-constrained applications.

Minimum Supply Voltage: 4.5 V

The minimum supply voltage of 4.5V ensures compatibility with a wide range of power sources, providing versatility in application scenarios.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this gate driver can withstand high-temperature environments, enhancing its reliability and durability.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40 °C to 85°C ensures the gate driver can function effectively in extreme temperature conditions.

Terminal Finish: TIN

The TIN terminal finish provides good conductivity and corrosion resistance, ensuring stable connections and reliable performance.

Terminal Position: DUAL

The dual terminal position allows for easy and flexible connectivity in the circuit, enhancing the ease of installation and integration.

Maximum Seated Height: 1.1 mm

The low maximum seated height of 1.1mm enables a compact and space-efficient design layout, ideal for applications with size constraints.

Width: 3 mm

The 3mm width contributes to the compact size of the gate driver, making it suitable for small electronic devices and circuit designs.

High Side Driver: YES

Having a high side driver capability allows this gate driver to effectively control power MOSFETs in high-side switching applications, providing versatile functionality.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature of 260 °C ensures proper soldering and reliability during assembly processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, the gate driver can withstand the soldering process without compromising its performance and functionality.

Length: 3 mm

The 3mm length contributes to the compact form factor of the gate driver, making it suitable for space-constrained applications.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that this gate driver can operate reliably in harsh industrial environments, making it a robust choice for industrial applications.

Terminal Form: GULL WING

The gull-wing terminal form facilitates easy and secure soldering onto the circuit board, ensuring reliable connections and stable performance.

Nominal Supply Voltage: 5 V

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making this gate driver easy to integrate into various electronic systems.

Terminal Pitch: 0.5 mm

The 0.5mm terminal pitch allows for precise and compact placement of terminals, enabling efficient wiring and space-saving design layouts.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The interface IC type of buffer or inverter-based MOSFET driver provides versatile functionality and compatibility with different types of MOSFET configurations, making it a flexible choice for diverse applications.

Technical Specifications

MOSFET Gate Drivers ADP3611JRMZ-REEL attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP10,.19,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

ADP3611JRMZ-REEL Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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