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74HC125DTR2G

Onsemi

74HC125DTR2G by Onsemi

74HC125DTR2G by Onsemi is a 4-function bus driver with 27ns propagation delay at 3V. It operates in the temperature range of -55 to 125 °C, suitable for military-grade applications. With a max I (ol) of 6A and output polarity as TRUE, it's ideal for high-speed communication systems.

Median Price

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Lifecycle Status

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5

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1k+

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Chip Stock

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Vyrian

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Digiode

USA . 2,416 parts In-Stock

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Sensible Micro Corp

USA . 180 parts In-Stock

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EMSNET

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Northwest PG Solutions

USA . 479 parts In-Stock

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AZTECH Wire

Italy . 1,118 parts In-Stock

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Kulean Microsystems

USA . 7,781 parts In-Stock

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SupplyDigital Components

Austria . 6,650 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 2,111 parts In-Stock

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UHIMA Technologies

Türkiye . 887 parts In-Stock

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Problanco Electronics

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Microchip USA

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Native Components

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Overview

Unlock the power of reliable and efficient data transmission with the 74HC125DTR2G by Onsemi. As a leader in the industry, Onsemi guarantees high-quality products that exceed expectations. Ideal for bus driver and transceiver applications, this product offers fast propagation delay, low power consumption, and easy surface mount installation. With its versatile features and exceptional performance, the 74HC125DTR2G is the perfect choice for customers looking for seamless and dependable connectivity solutions. Experience the value and benefits of this cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for use in various applications.

Propagation Delay At Nominal Supply: 27 ns

The low propagation delay ensures high-speed signal transmission, making this product suitable for time-sensitive applications.

Surface Mount: YES

Being surface mountable, this product is easy to install and saves space on the PCB, making it efficient for compact designs.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V, this product offers energy efficiency and compatibility with standard power sources.

Output Characteristics: 3-STATE

The 3-state output characteristics allow for high flexibility in controlling signal outputs, making it versatile for various applications.

Technical Specifications

Bus Driver & Transceivers 74HC125DTR2G attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE LOW

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

4

No. of Ports:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

27 ns

Propagation Delay (tpd):

135 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

74HC125DTR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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