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4N35SR2M

Onsemi

4N35SR2M by Onsemi

4N35SR2M by Onsemi is a SINGLE optocoupler with 0.06A forward current, 100°C max temp, and 7500V isolation voltage. Ideal for applications requiring high isolation levels, such as industrial control systems or power supplies due to its 30V collector-emitter breakdown voltage and fast response time of 0.00001s.

Median Price

$0.228

Lifecycle Status

Suppliers In-Stock

40

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,292 parts In-Stock

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Mouser Electronics

USA . 32,227 parts In-Stock

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32,227

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$0.340

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$0.211

DigiKey

USA . 15,675 parts In-Stock

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$0.700

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Adafruit Industries

USA . 350 parts In-Stock

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Future Electronics

Canada . 398,000 parts In-Stock

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Element14

Singapore . 35,012 parts In-Stock

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Farnell

UK . 34,816 parts In-Stock

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Arrow

USA . 29,000 parts In-Stock

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Verical

USA . 29,000 parts In-Stock

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Master Electronics

USA . 5,000 parts In-Stock

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Chip1Stop

Japan . 233 parts In-Stock

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Rochester

USA . 130 parts In-Stock

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$0.239

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$0.199

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Distributors (In-Stock)

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Digiode

USA . 1,659 parts In-Stock

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$0.186

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Nova Conductors

Japan . 110 parts In-Stock

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TME

Poland . 520 parts In-Stock

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Maritex

Poland . 19 parts In-Stock

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$0.270

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IBS Electronics

USA . 475,000 parts In-Stock

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NAC Semi

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Martec Srl

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First Choice Components Inc.

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Microfarads

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Inventory MP

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Bristol Electronics

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Holdelec - ElecDif-Pro

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Ampacity Inc.

Singapore . 56,524 parts In-Stock

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$0.128

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Semicontronic

India . 56,316 parts In-Stock

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Corohmni

South Africa . 439 parts In-Stock

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Corphita

USA . 1,206 parts In-Stock

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Continental Prestige Electronics

USA . 42,206 parts In-Stock

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$0.287

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$0.281

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Argo Parts USA

USA . 1,085 parts In-Stock

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$0.287

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$0.278

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Aranea Global

USA . 500 parts In-Stock

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$0.296

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Netroflash

USA . 1,000 parts In-Stock

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GreenTree Electronics

Israel . 35,000 parts In-Stock

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Perfect Parts

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Eastek

USA . 22,000 parts In-Stock

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Lixinc

USA . 16,193 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

Germany . 5,306 parts In-Stock

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TANS Electronics

Latvia . 4,819 parts In-Stock

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SupplyDigital Components

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Glotronic Ltd.

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 2,223 parts In-Stock

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Supply Digital

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Cyclops Electronics Ltd (Excess)

UK . 906 parts In-Stock

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UHIMA Technologies

Türkiye . 547 parts In-Stock

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Advanced Electronics

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Kulean Microsystems

USA . 64 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the 4N35SR2M optocoupler transistor output. Ideal for a wide range of applications, this product offers unbeatable value and performance. With a high current transfer ratio and excellent isolation voltage, you can trust this optocoupler to deliver outstanding results every time. Trust Onsemi for all your optoelectronic needs and experience the difference for yourself.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easy integration into various circuit designs and applications.

Maximum Forward Current: 0.06 A

Capable of handling a maximum forward current of 0.06 A, providing reliable performance under normal operating conditions.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

Transistor output optocoupler type ensures efficient signal transfer and isolation between input and output circuits.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100°C, this optocoupler can withstand high temperature environments without compromising performance.

Minimum Operating Temperature: -55 °C

Provides reliable operation even in low temperature environments down to -55°C.

Terminal Finish: TIN

TIN terminal finish offers good solderability and ensures stable electrical connections.

Maximum Power Dissipation: 0.15 W

Efficient power dissipation of 0.15 W helps in preventing overheating and ensuring long-term reliability.

Minimum Current Transfer Ratio: 40 %

Offers a minimum current transfer ratio of 40%, ensuring accurate signal transfer between input and output.

Maximum Dark Current: 50 nA

Low dark current of 50 nA ensures minimal leakage current and accurate signal transmission.

Packing Method: TR

TR packing method provides secure packaging for transportation and storage of the optocoupler.

Maximum Response Time: 0.00001 s

Ultra-fast maximum response time of 0.00001 s ensures quick signal transmission and response in critical applications.

Minimum Collector-emitter Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, the optocoupler provides reliable protection for connected devices.

Nominal Current Transfer Ratio: 100 %

High nominal current transfer ratio of 100% ensures accurate signal reproduction and minimal signal loss.

Maximum Isolation Voltage: 7500 V

High isolation voltage of 7500 V ensures effective isolation between input and output circuits, enhancing safety and reducing interference.

Mounting Feature: SURFACE MOUNT

Surface mount feature allows for easy and secure installation on PCBs, saving space and simplifying assembly.

Maximum Forward Voltage: 1.5 V

Low maximum forward voltage of 1.5 V helps in minimizing power consumption and maintaining efficiency.

Technical Specifications

Optocoupler Transistor Outputs 4N35SR2M attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL RECOGNIZED

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

40 %

Nominal Current Transfer Ratio:

100 %

Maximum Dark Current:

50 nA

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

7500 V

JESD-609 Code:

e3

Mounting Feature:

No. of Elements:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Packing Method:

TR

Maximum Power Dissipation:

.15 W

Maximum Response Time:

.00001 s

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

TIN

Trade Compliance

4N35SR2M Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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