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4N32TVM

Onsemi

4N32TVM by Onsemi

4N32TVM by Onsemi is a single optocoupler with Darlington output. It has a max forward current of 0.08A, min operating temp of -40°C, and max isolation voltage of 4170V. Ideal for applications requiring high current transfer ratio, low dark current, and fast response time in through-hole mounting setups.

Median Price

$0.390

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 849 parts In-Stock

1+ parts

$0.830

100+ parts

$0.424

1k+ parts

$0.302

10k+ parts

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849

$0.830

$0.424

$0.302

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Flip Electronics (Authorized)

USA . 5,000 parts In-Stock

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5,000

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Rochester

USA . 2,000 parts In-Stock

1+ parts

-

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$0.312

1k+ parts

$0.259

10k+ parts

$0.231

2,000

-

$0.312

$0.259

$0.231

DigiKey

USA . 2,000 parts In-Stock

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100+ parts

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$0.390

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2,000

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$0.390

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Distributors (In-Stock)

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Digiode

USA . 1,426 parts In-Stock

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$0.242

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1,426

$0.242

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Flip Electronics

USA . 5,000 parts In-Stock

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DigiKey Marketplace

USA . 5,000 parts In-Stock

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VNN

France . 3,022 parts In-Stock

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3,022

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Vyrian

USA . 2,985 parts In-Stock

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2,985

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Nova Conductors

Japan . 82 parts In-Stock

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82

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Distributors (Availability)

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Corphita

USA . 1,251 parts In-Stock

1+ parts

$0.230

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1,251

$0.230

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Corohmni

South Africa . 360 parts In-Stock

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$0.250

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360

$0.250

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Ampacity Inc.

Singapore . 2,886 parts In-Stock

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$0.463

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2,886

$0.463

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QUARKTWIN TECHNOLOGY LTD

USA . 14,770 parts In-Stock

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14,770

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Continental Prestige Electronics

USA . 8,832 parts In-Stock

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Argo Parts USA

USA . 6,813 parts In-Stock

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TANS Electronics

Latvia . 6,554 parts In-Stock

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6,554

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Problanco Electronics

Mexico . 6,500 parts In-Stock

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iodParts Technologies Inc.

India . 5,266 parts In-Stock

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SupplyDigital Components

Austria . 4,474 parts In-Stock

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4,474

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Metaverse IC Inc.

Canada . 3,495 parts In-Stock

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Kulean Microsystems

USA . 2,372 parts In-Stock

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Glotronic Ltd.

UK . 2,300 parts In-Stock

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Supply Digital

USA . 1,308 parts In-Stock

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Perfect Parts

USA . 800 parts In-Stock

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800

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UHIMA Technologies

Türkiye . 178 parts In-Stock

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178

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Elevate your electronic projects with the reliable and high-quality 4N32TVM optocoupler transistor output by Onsemi. This product offers superior performance, ensuring precise signal transmission and isolation in various applications. With Onsemi's trusted reputation for innovation and excellence, you can trust that the 4N32TVM will deliver exceptional results. Experience the value and benefits of this product today and take your projects to the next level!

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies the installation and setup process, making it easier to use.

Maximum Forward Current: 0.08 A

Can handle a maximum forward current of 0.08 A, suitable for various applications.

Optoelectronic Type: DARLINGTON OUTPUT OPTOCOUPLER

Darlington output optocoupler provides high current transfer ratio and low saturation voltage, ensuring efficient operation.

Maximum Operating Temperature: 100 °C

Can operate at high temperatures up to 100 °C, suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Can operate at low temperatures down to -40 °C, making it suitable for a wide range of operating environments.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring long-term reliability.

Maximum Power Dissipation: 0.15 W

Low power dissipation of 0.15 W helps in reducing energy consumption and heat generation.

Minimum Current Transfer Ratio: 500 %

High minimum current transfer ratio of 500% ensures accurate signal transmission.

Maximum Dark Current: 100 nA

Low dark current of 100 nA ensures minimal leakage current, improving overall performance.

Packing Method: TUBE

Tube packaging provides protection during storage and transportation, reducing the risk of damage.

Maximum Response Time: 0.000005 s

Fast response time of 0.000005 s ensures quick signal transmission, suitable for time-critical applications.

Minimum Collector-emitter Breakdown Voltage: 30 V

Minimum collector-emitter breakdown voltage of 30 V ensures safe operation under high voltage conditions.

Maximum Isolation Voltage: 4170 V

High isolation voltage of 4170 V ensures proper isolation between input and output circuits, enhancing safety.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature makes it easy to secure the optocoupler onto a PCB, ensuring mechanical stability.

Maximum Forward Voltage: 1.5 V

Low forward voltage of 1.5 V helps in minimizing power loss and heat generation.

Maximum On State Current: 0.15 A

Can handle a maximum on-state current of 0.15 A, suitable for high current applications.

Technical Specifications

Optocoupler Transistor Outputs 4N32TVM attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED, VDE APPROVED

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

500 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.08 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

4170 V

JESD-609 Code:

e3

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.15 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TUBE

Maximum Power Dissipation:

.15 W

Maximum Response Time:

.000005 s

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

TIN

Trade Compliance

4N32TVM Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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