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4N32SVM

Onsemi

4N32SVM by Onsemi

4N32SVM by Onsemi is a single optocoupler with Darlington output. It has a max forward current of 0.08A, min operating temp of -40 °C, and max isolation voltage of 4170V. Ideal for applications requiring high current transfer ratio, low dark current, and fast response time in surface mount configurations.

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

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Vyrian

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Prism Electronics

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Native Components

USA . 339 parts In-Stock

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Northwest PG Solutions

USA . 1,806 parts In-Stock

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Andel Nordic

Denmark . 288 parts In-Stock

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SupplyDigital Components

Austria . 7,935 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

Latvia . 4,845 parts In-Stock

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Glotronic Ltd.

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Corphita

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UHIMA Technologies

Türkiye . 718 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of Onsemi's 4N32SVM Optocoupler Transistor Output. With a single configuration, this DARLINGTON OUTPUT OPTOCOUPLER delivers exceptional performance in a wide range of applications. From industrial automation to consumer electronics, this product offers customers unparalleled value with its high current transfer ratio, low dark current, and fast response time. Trust Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to use and install in various applications.

Maximum Forward Current: 0.08 A

Capable of handling a maximum forward current of 0.08 A, ensuring reliability and stability in operation.

Optoelectronic Type: DARLINGTON OUTPUT OPTOCOUPLER

Utilizes Darlington output configuration which provides high current transfer ratio and low saturation voltage, making it ideal for demanding applications.

Maximum Operating Temperature: 100 °C

Can operate efficiently at high temperatures up to 100 °C, suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Capable of operating in cold temperatures as low as -40 °C, ensuring versatility in various climates.

Maximum Power Dissipation: 0.15 W

Low power dissipation of 0.15 W helps in reducing heat generation and energy consumption.

Minimum Current Transfer Ratio: 500 %

High minimum current transfer ratio of 500% ensures accurate signal amplification and transmission.

Maximum Dark Current: 100 nA

Low dark current of 100 nA minimizes leakage current, improving overall performance.

Packing Method: TUBE

Packaged in a tube for easy storage, handling, and transportation.

Maximum Response Time: 0.000005 s

Fast response time of 0.000005 seconds ensures quick signal processing and improved system responsiveness.

Minimum Collector-emitter Breakdown Voltage: 30 V

Provides a minimum collector-emitter breakdown voltage of 30 V, ensuring reliability and protection against voltage spikes.

Maximum Isolation Voltage: 4170 V

High isolation voltage of 4170 V enhances safety and protection, making it suitable for high-voltage applications.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure installation on circuit boards.

Maximum Forward Voltage: 1.5 V

Low maximum forward voltage of 1.5 V helps in reducing power loss and improving efficiency.

Maximum On State Current: 0.15 A

Capable of handling a maximum on-state current of 0.15 A, suitable for various load requirements.

Technical Specifications

Optocoupler Transistor Outputs 4N32SVM attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL APPROVED, VDE APPROVED

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

500 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.08 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

4170 V

Mounting Feature:

No. of Elements:

1

Maximum On State Current:

.15 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TUBE

Maximum Power Dissipation:

.15 W

Maximum Response Time:

.000005 s

Trade Compliance

4N32SVM Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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