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3EZ15D5G

Onsemi

3EZ15D5G by Onsemi

The Onsemi 3EZ15D5G is a Zener diode with a nominal reference voltage of 15V and max power dissipation of 1W. It operates at temperatures up to 175 °C, with a max voltage tolerance of 5%. Ideal for applications requiring stable voltage regulation in electronic circuits at a working test current of 50mA.

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Digiode

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AZTECH Wire

Italy . 916 parts In-Stock

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Native Components

USA . 407 parts In-Stock

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Northwest PG Solutions

USA . 906 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

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Overview

Unleash the power of precision with the Onsemi 3EZ15D5G Zener Diode. Crafted by a trusted manufacturer, this single-config diode offers unparalleled quality and reliability for a wide range of applications. With a maximum voltage tolerance of 5% and a nominal reference voltage of 15V, this diode provides precise and stable performance, ensuring optimal functionality in any circuit. Say goodbye to guesswork and hello to peace of mind with the Onsemi 3EZ15D5G Zener Diode - your key to unlocking seamless electronic solutions.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Working Test Current: 50 mA

With a working test current of 50 mA, this Zener diode can handle moderate current requirements efficiently.

Maximum Voltage Tolerance: 5 %

The tight maximum voltage tolerance of 5% ensures accurate voltage regulation in various applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature of 175 °C ensures reliability and stability in demanding thermal conditions.

Maximum Dynamic Impedance: 5.5 ohm

Low maximum dynamic impedance of 5.5 ohm allows for effective voltage regulation and low signal distortion.

Terminal Finish: TIN

TIN terminal finish provides good solderability and corrosion resistance for reliable connection.

Maximum Power Dissipation: 1 W

With a maximum power dissipation of 1W, this Zener diode can handle high power levels without damage.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260 °C ensures stable performance during soldering processes.

Diode Type: ZENER DIODE

Being a Zener diode, it is specifically designed for voltage regulation and protection in electronic circuits.

Nominal Reference Voltage: 15 V

The nominal reference voltage of 15V makes this Zener diode suitable for various voltage regulation applications.

Technical Specifications

Zener Diodes 3EZ15D5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Dynamic Impedance:

5.5 ohm

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

15 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Maximum Voltage Tolerance:

5 %

Working Test Current:

50 mA

Trade Compliance

3EZ15D5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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