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2SC3070

Onsemi

2SC3070 by Onsemi

The Onsemi 2SC3070 is an NPN transistor with a max power dissipation of 1W, hFE of 800, and max collector current of 1.2A. Ideal for low-power applications in electronics due to its single configuration and operating temperature up to 150 °C.

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Digiode

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Fibra_Brandt Electronic GMBH

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Huijzer Components

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LittleDiode

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GES GmbH

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

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Native Components

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UHIMA Technologies

Türkiye . 669 parts In-Stock

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Northwest PG Solutions

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Overview

Elevate your electronic designs with the high-quality 2SC3070 NPN transistor from Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient components for various applications. The 2SC3070 offers superior performance with a maximum power dissipation of 1W and a minimum DC current gain of 800. Whether you're working on amplifiers, switches, or voltage regulators, this transistor provides exceptional value, benefits, and advantages that will take your projects to the next level. Experience innovation and reliability with the 2SC3070 by Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and widely compatible.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, simplifying the design process.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels effectively.

Minimum DC Current Gain (hFE): 800

A high minimum DC current gain of 800 ensures efficient amplification and signal processing.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, allowing for reliable performance in various applications.

Maximum Collector Current (IC): 1.2 A

The maximum collector current of 1.2 A provides ample current-handling capability for different circuit requirements.

Technical Specifications

Other Function Transistors 2SC3070 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

800

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SC3070 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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