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1N6379RL4G

Onsemi

1N6379RL4G by Onsemi

1N6379RL4G by Onsemi is a Zener diode with a breakdown voltage of 25.9V, clamping voltage of 37.5V, and peak power dissipation of 1500W. It is used in transient suppression applications to protect circuits from voltage spikes and surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 78,000 parts In-Stock

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Vyrian

USA . 8,818 parts In-Stock

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Digiode

USA . 2,349 parts In-Stock

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AZTECH Wire

Italy . 879 parts In-Stock

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$14.160

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Native Components

USA . 136 parts In-Stock

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$25.315

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Northwest PG Solutions

USA . 5 parts In-Stock

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$27.847

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$25.062

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SupplyDigital Components

Austria . 8,309 parts In-Stock

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TANS Electronics

Latvia . 6,684 parts In-Stock

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Kulean Microsystems

USA . 4,641 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 271 parts In-Stock

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UHIMA Technologies

Türkiye . 208 parts In-Stock

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Corohmni

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Overview

Enhance your electronic circuits with the reliable 1N6379RL4G transient suppression device from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality products that are designed to protect your valuable equipment from voltage spikes and surges. Ideal for a wide range of applications, this zener diode offers superior performance and efficiency, ensuring your devices operate smoothly and safely. Trust Onsemi to provide you with the best solutions for your circuit protection needs, and experience the peace of mind knowing your electronics are safeguarded with the 1N6379RL4G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection against environmental factors, ensuring durability and reliability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability makes it suitable for high-energy surge protection applications.

Package Shape: ROUND

Compact round shape allows for easy integration and installation in various electronic circuits.

Terminal Finish: TIN

TIN finish provides good conductivity and solderability for secure connections.

Maximum Power Dissipation: 5 W

Efficient power dissipation helps in protecting electronic components from excessive heat buildup.

Minimum Breakdown Voltage: 25.9 V

Low breakdown voltage ensures prompt response to voltage spikes, offering effective protection.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient voltage suppression, ensuring effective protection against surges.

Technology: ZENER

Zener technology enables precise voltage regulation and protection against transient voltage spikes.

Maximum Repetitive Peak Reverse Voltage: 22 V

Suitable for low voltage applications where protection against voltage surges is required.

Polarity: UNIDIRECTIONAL

Unidirectional polarity enables protection against voltage spikes in a specific direction, ensuring targeted suppression.

Maximum Clamping Voltage: 37.5 V

Effectively limits the peak voltage during transient events, protecting downstream components.

Technical Specifications

Transient Suppression Devices 1N6379RL4G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

25.9 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

37.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

22 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6379RL4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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