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1N6374G

Onsemi

1N6374G by Onsemi

1N6374G by Onsemi is a Zener diode with 8V max reverse voltage, 1500W peak power dissipation, and 15V clamping voltage. It is used for transient suppression in electronics to protect against voltage spikes. The device has an axial terminal position and is housed in a plastic/epoxy package with tin finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 47,000 parts In-Stock

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Vyrian

USA . 9,892 parts In-Stock

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Digiode

USA . 1,704 parts In-Stock

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Native Components

USA . 759 parts In-Stock

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$0.296

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$0.284

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Northwest PG Solutions

USA . 610 parts In-Stock

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$0.325

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$0.287

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AZTECH Wire

Italy . 609 parts In-Stock

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$8.500

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609

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Problanco Electronics

Mexico . 7,531 parts In-Stock

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SupplyDigital Components

Austria . 6,686 parts In-Stock

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TANS Electronics

Latvia . 5,086 parts In-Stock

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Kulean Microsystems

USA . 4,616 parts In-Stock

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Corphita

USA . 1,080 parts In-Stock

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UHIMA Technologies

Türkiye . 794 parts In-Stock

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Corohmni

South Africa . 374 parts In-Stock

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Overview

Enhance your electronic circuits with the 1N6374G transient suppression device by Onsemi. Designed with high-quality materials and advanced technology, this diode offers superior protection against voltage spikes and surges. Whether you're safeguarding sensitive equipment in industrial applications or ensuring reliable performance in automotive systems, the 1N6374G provides peace of mind with its exceptional power dissipation and clamping voltage capabilities. Trust Onsemi for reliable components that deliver unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers excellent durability and protection, making the product ideal for long-term use in various environments.

Config: SINGLE

The single configuration simplifies installation and reduces the chances of errors during setup.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability ensures reliable protection against transient voltage spikes.

Package Shape: ROUND

Round shape allows for efficient installation in different systems without taking up too much space.

No. of Terminals: 2

Having only 2 terminals simplifies connections and reduces the chances of incorrect wiring.

Package Style (Meter): LONG FORM

Long form package style provides stability and ease of handling during installation.

Terminal Finish: TIN

Tin finish ensures good conductivity and resistance to corrosion, enhancing the product's overall performance.

Terminal Position: AXIAL

Axial terminal position facilitates easy connection and secure mounting within the system.

Case Connection: ISOLATED

Isolated case connection enhances safety by preventing any potential short circuits.

Maximum Power Dissipation: 5 W

High power dissipation rating ensures the product can handle transient surges effectively without damage.

Minimum Breakdown Voltage: 9.4 V

Having a minimum breakdown voltage of 9.4 V guarantees reliable protection against voltage spikes above this threshold.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, the product can withstand high-temperature soldering processes during assembly.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode ensures efficient suppression of transient voltage spikes.

Technology: ZENER

Zener technology provides precise and reliable voltage regulation, enhancing the overall performance of the product.

Terminal Form: WIRE

Wire terminal form allows for secure connections and easy integration into various systems.

Maximum Repetitive Peak Reverse Voltage: 8 V

With a maximum repetitive peak reverse voltage of 8 V, the product offers reliable protection against voltage surges within this range.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the product suppresses transient spikes in one direction only, providing targeted protection.

Maximum, Maximum Clamping Voltage: 15 V

Having a maximum clamping voltage of 15 V guarantees effective suppression of transient voltages below this level.

Diode Element Material: SILICON

The use of silicon diode element material ensures high performance and reliability in transient voltage suppression.

Technical Specifications

Transient Suppression Devices 1N6374G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

9.4 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

15 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

8 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6374G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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