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1N5820RLG

Onsemi

1N5820RLG by Onsemi

1N5820RLG by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.37V and output current of 3A. It operates b/w -65°C to 125°C, making it suitable for high-efficiency applications. The diode has a max repetitive peak reverse voltage of 20V and non-repetitive peak forward current of 80A, housed in a plastic/epoxy package with matte tin terminal finish.

Median Price

$0.244

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Farnell

UK . 785 parts In-Stock

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$0.312

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$0.158

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$0.121

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$0.104

785

$0.312

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$0.104

Chip1Stop

Japan . 3 parts In-Stock

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$1.630

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Avnet

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$0.165

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RS (Exports)

UK . 2,620 parts In-Stock

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$0.244

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Rochester

USA . 9 parts In-Stock

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$0.221

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$0.163

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DigiKey

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Digiode

USA . 536 parts In-Stock

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Nova Conductors

Japan . 83 parts In-Stock

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$0.332

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Ashlea Components Ltd

UK . 53,885 parts In-Stock

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Chip Stock

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Vyrian

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Bristol Electronics

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VNN

France . 2,875 parts In-Stock

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Prism Electronics

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Goldney Electronics S.L.

Spain . 1,500 parts In-Stock

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Flip Electronics

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ComSIT Distribution GmbH

Germany . 1,267 parts In-Stock

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PC Components Company LLC

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Mil-Aero Solutions, Inc.

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DF Sales Co.

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DF Sales Co.

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Semtec, LLC

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,499 parts In-Stock

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$0.162

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Corphita

USA . 2,081 parts In-Stock

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$0.171

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Corohmni

South Africa . 440 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.332

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$0.315

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$0.309

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Continental Prestige Electronics

USA . 12,508 parts In-Stock

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$0.409

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Andel Nordic

Denmark . 103 parts In-Stock

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$1.230

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$0.858

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AZTECH Wire

Italy . 349 parts In-Stock

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$19.510

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Component Stockers USA

USA . 49,792 parts In-Stock

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Metaverse IC Inc.

Canada . 15,000 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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TANS Electronics

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Lixinc

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SupplyDigital Components

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Problanco Electronics

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UHIMA Technologies

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GreenTree Electronics

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iodParts Technologies Inc.

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Overview

Unleash the power of efficiency with the 1N5820RLG diode by Onsemi. Crafted from high-quality materials, this single-configured rectifier diode is designed to optimize performance and reliability in a variety of applications. With a maximum output current of 3A and a maximum forward voltage of just 0.37V, this Schottky technology diode delivers exceptional value and benefits to customers seeking superior functionality and durability. Trust Onsemi for cutting-edge solutions that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers a good balance of durability and cost-effectiveness, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies the design and installation process, making it an efficient choice for projects requiring a single diode.

Package Shape: ROUND

The round shape allows for easy mounting and integration into a variety of circuit designs, making it a versatile option for different setups.

No. of Terminals: 2

With only two terminals, this diode is easy to connect and install, reducing the chances of wiring errors and making it user-friendly.

Package Style (Meter): LONG FORM

The long form package style provides additional space for heat dissipation and protection, enhancing the overall durability and performance of the diode.

Application: EFFICIENCY

Designed for efficiency, this diode maximizes energy conversion and minimizes power loss, making it ideal for applications where efficient performance is crucial.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising its performance, ensuring reliability in various environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows this diode to function effectively in colder conditions, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and good solderability, ensuring reliable electrical connections and longevity of the diode.

Terminal Position: AXIAL

The axial terminal position simplifies installation and connection of the diode, making it a practical choice for projects requiring precise alignment.

Case Connection: ISOLATED

With an isolated case connection, this diode offers enhanced safety and protection against electrical shorts, making it a secure option for various applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product converts alternating current (AC) to direct current (DC) efficiently, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.37 V

The low maximum forward voltage drop ensures minimal power loss during operation, resulting in efficient energy conversion and optimized performance.

Maximum Output Current: 3 A

With a high maximum output current, this diode can handle heavy loads without overheating, making it suitable for high-power applications.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and low forward voltage drop, enhancing the efficiency and performance of the diode in various applications.

Terminal Form: WIRE

The wire terminal form simplifies connection and installation, providing a reliable electrical connection and ease of use for the diode.

Maximum Repetitive Peak Reverse Voltage: 20 V

The high maximum repetitive peak reverse voltage allows this diode to handle voltage spikes effectively, ensuring reliable operation in unpredictable electrical conditions.

Maximum Non Repetitive Peak Forward Current: 80 A

With a high non-repetitive peak forward current rating, this diode can withstand sudden surges in current without damage, making it a robust choice for demanding applications.

Diode Element Material: SILICON

Made of silicon, this diode element material offers high conductivity and temperature stability, ensuring reliable performance and longevity.

Technical Specifications

Diodes & Rectifiers 1N5820RLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS, FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.37 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N5820RLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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