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1N5356BG

Onsemi

1N5356BG by Onsemi

1N5356BG by Onsemi is a Zener diode with a nominal reference voltage of 19V and max power dissipation of 5W. It operates at a max temperature of 200 °C, making it suitable for high-temperature applications. With a working test current of 65mA, it provides stable voltage regulation in various electronic circuits.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,629 parts In-Stock

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-

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$0.132

1k+ parts

$0.110

10k+ parts

$0.098

2,629

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$0.132

$0.110

$0.098

Distributors (In-Stock)

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Digiode

USA . 214 parts In-Stock

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$0.103

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$0.103

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Vyrian

USA . 2,708 parts In-Stock

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Semi Source

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Corphita

USA . 278 parts In-Stock

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$0.097

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Corohmni

South Africa . 481 parts In-Stock

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$0.108

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Component Stockers USA

USA . 2,613 parts In-Stock

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$0.110

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$0.110

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$0.100

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Native Components

USA . 784 parts In-Stock

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$0.560

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Northwest PG Solutions

USA . 2,048 parts In-Stock

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$0.616

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AZTECH Wire

Italy . 933 parts In-Stock

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$13.130

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SupplyDigital Components

Austria . 5,311 parts In-Stock

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Kulean Microsystems

USA . 3,524 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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TANS Electronics

Latvia . 2,337 parts In-Stock

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Problanco Electronics

Mexico . 1,581 parts In-Stock

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UHIMA Technologies

Türkiye . 115 parts In-Stock

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Overview

Unlock the power of precision with the 1N5356BG Zener Diode by Onsemi. Crafted with superior quality and expertise, this single-configured diode offers a wide range of applications from voltage regulation to surge protection. With a maximum voltage tolerance of 5% and a nominal reference voltage of 19V, this diode ensures reliable performance in various electronic circuits. Say goodbye to fluctuations and hello to stability with the Onsemi 1N5356BG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the diode, making it durable and long-lasting.

Working Test Current: 65 mA

Sufficient current for most applications where a Zener diode is needed.

Maximum Voltage Tolerance: 5 %

Ensures precise voltage regulation within a small margin of error.

Maximum Operating Temperature: 200 °C

Can withstand high temperatures, suitable for demanding environments.

Maximum Power Dissipation: 5 W

Can dissipate relatively high power, making it suitable for applications requiring power handling capabilities.

Nominal Reference Voltage: 19 V

Provides a specific reference voltage for regulation purposes in electronic circuits.

Technical Specifications

Zener Diodes 1N5356BG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

3 ohm

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

19 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

65 mA

Trade Compliance

1N5356BG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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