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1N5248BTR

Onsemi

1N5248BTR by Onsemi

1N5248BTR by Onsemi is a Zener diode with a nominal reference voltage of 18V, max power dissipation of 0.5W, and working test current of 7mA. It is commonly used in applications requiring precise voltage regulation such as power supplies and voltage references due to its unidirectional polarity and low dynamic impedance of 21 ohm.

Median Price

$0.022

Lifecycle Status

Suppliers In-Stock

29

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1k+

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Chip1Stop

Japan . 10 parts In-Stock

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DigiKey

USA . 3,657 parts In-Stock

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Rochester

USA . 509,443 parts In-Stock

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Master Electronics

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Verical

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Arrow

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Future Electronics

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Freelance Electronics

USA . 364 parts In-Stock

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Digiode

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Bristol Electronics

USA . 1,960 parts In-Stock

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Component Electronics Inc.

Canada . 8,900 parts In-Stock

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Nova Conductors

Japan . 987 parts In-Stock

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IBS Electronics

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Chip Stock

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Atlantic Semiconductor

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NAC Semi

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Semi Source

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PC Components Company LLC

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Carlin Systems, Inc.

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Ampacity Inc.

Singapore . 356,127 parts In-Stock

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Component Stockers USA

USA . 184,964 parts In-Stock

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Corphita

USA . 4,056 parts In-Stock

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Semicontronic

India . 133,554 parts In-Stock

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Corohmni

South Africa . 1,301 parts In-Stock

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Continental Prestige Electronics

USA . 4,785 parts In-Stock

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Argo Parts USA

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Netroflash

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GreenTree Electronics

Israel . 90,000 parts In-Stock

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Microchip USA

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UHIMA Technologies

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Overview

Unlock the power of precision with the 1N5248BTR Zener Diode by Onsemi. Crafted with quality materials and cutting-edge technology, this diode offers unparalleled performance and reliability. Ideal for voltage regulation and protection in a variety of electronic devices, this product ensures smooth and efficient operation. Experience peace of mind knowing that your electronics are safeguarded with the 1N5248BTR, a premium solution that delivers value, benefits, and advantages to customers seeking top-notch quality.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material provides good heat dissipation and electrical insulation, making this product reliable and durable.

Working Test Current: 7 mA

The higher working test current of 7 mA ensures the stability and reliability of the zener diode under normal operating conditions.

Maximum Voltage Tolerance: 5 %

With a maximum voltage tolerance of 5%, this zener diode ensures precise voltage regulation in circuits, leading to accurate and consistent performance.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200°C allows the zener diode to operate efficiently in a wide range of temperature environments.

Maximum Power Dissipation: 0.5 W

The maximum power dissipation of 0.5 W ensures that the zener diode can handle high power loads without getting damaged, making it suitable for various applications.

Nominal Reference Voltage: 18 V

The nominal reference voltage of 18 V provides a stable output voltage for voltage regulation applications, making this zener diode ideal for precision circuits.

Technical Specifications

Zener Diodes 1N5248BTR attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

21 ohm

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

18 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

7 mA

Trade Compliance

1N5248BTR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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