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1N4935RLG

Onsemi

1N4935RLG by Onsemi

1N4935RLG by Onsemi is a single rectifier diode with a max forward voltage of 1.2V and output current of 1A. With a max reverse recovery time of 0.3us, it operates in temperatures ranging from -65 to 150°C. Ideal for applications requiring high-speed switching and power rectification in electronic circuits.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14,076 parts In-Stock

1+ parts

$0.290

100+ parts

$0.109

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$0.063

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$0.048

14,076

$0.290

$0.109

$0.063

$0.048

DigiKey

USA . 5,696 parts In-Stock

1+ parts

$0.290

100+ parts

$0.109

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$0.070

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$0.063

5,696

$0.290

$0.109

$0.070

$0.063

Future Electronics

Canada . 35,000 parts In-Stock

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$0.035

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Newark

USA . 30,000 parts In-Stock

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$0.099

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$0.099

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Arrow

USA . 25,000 parts In-Stock

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Verical

USA . 25,000 parts In-Stock

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Rochester

USA . 24,300 parts In-Stock

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$0.042

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$0.035

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$0.031

24,300

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$0.042

$0.035

$0.031

Master Electronics

USA . 20,000 parts In-Stock

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$0.034

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RS (Exports)

UK . 2,700 parts In-Stock

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$0.866

2,700

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$0.866

Chip1Stop

Japan . 1,950 parts In-Stock

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$0.058

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$0.045

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$0.043

1,950

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$0.058

$0.045

$0.043

Distributors (In-Stock)

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Digiode

USA . 2,279 parts In-Stock

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$0.032

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Nova Conductors

Japan . 37 parts In-Stock

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$0.061

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IBS Electronics

USA . 105,000 parts In-Stock

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Flip Electronics

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NAC Semi

USA . 40,000 parts In-Stock

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Sensible Micro Corp

USA . 24,000 parts In-Stock

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Vyrian

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Chip Stock

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Electro Sonic

Canada . 15,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 14,022 parts In-Stock

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ComSIT USA

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Semtec, LLC

USA . 11,000 parts In-Stock

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Prism Electronics

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R&J Components

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Bristol Electronics

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Atlantic Semiconductor

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Goldney Electronics S.L.

Spain . 3,000 parts In-Stock

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VNN

France . 1,931 parts In-Stock

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Cyclops Electronics Ltd

UK . 305 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 20,750 parts In-Stock

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$0.025

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Corohmni

South Africa . 125 parts In-Stock

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Corphita

USA . 288 parts In-Stock

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Netroflash

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Perfect Parts

USA . 109,954 parts In-Stock

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Assy Fe

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GreenTree Electronics

Israel . 26,320 parts In-Stock

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Kepictronics

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Lixinc

USA . 18,809 parts In-Stock

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TANS Electronics

Latvia . 7,546 parts In-Stock

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SupplyDigital Components

Austria . 7,387 parts In-Stock

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Problanco Electronics

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ChipstoGo Electronic ltd

UK . 4,515 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Kulean Microsystems

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Metaverse IC Inc.

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UHIMA Technologies

Türkiye . 369 parts In-Stock

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Overview

Upgrade your electronic projects with the high-quality 1N4935RLG diode by Onsemi. Designed with precision and reliability in mind, this rectifier diode offers fast reverse recovery time and a maximum output current of 1A, making it perfect for a wide range of applications. Whether you're a hobbyist or a professional, this diode's matte tin terminal finish and isolated case connection ensure easy installation and dependable performance. Trust Onsemi's reputation for excellence and choose the 1N4935RLG for all your diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the diode, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies the circuit design and integration, making it easier to use in different electronic systems.

Maximum Reverse Recovery Time: 0.3 us

The fast reverse recovery time of 0.3 us ensures efficient and quick switching performance, improving the overall efficiency of the system.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into different electronic devices, providing versatility in application.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces the chances of errors during installation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the diode can operate in a wide range of environments without malfunctioning.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C allows the diode to function in colder conditions, increasing its versatility.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: AXIAL

The axial terminal position makes it easy to align and mount the diode, simplifying the installation process.

Case Connection: ISOLATED

The isolated case connection helps prevent electrical interference and improves the safety of the diode in operation.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is specifically designed for converting AC to DC current efficiently, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.2 V

The low forward voltage of 1.2 V minimizes power losses and heat dissipation, improving the energy efficiency of the system.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this diode can handle moderate power loads, making it suitable for various electronic applications.

Terminal Form: WIRE

The wire terminal form allows for easy soldering or connection to other components, facilitating assembly and maintenance.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high maximum repetitive peak reverse voltage of 200 V provides robust protection against reverse voltage spikes, ensuring the longevity of the diode.

Maximum Non Repetitive Peak Forward Current: 30 A

The high maximum non-repetitive peak forward current of 30 A allows the diode to handle sudden surges in current without damage, enhancing its reliability.

Diode Element Material: SILICON

Being made of silicon, a common semiconductor material, this diode offers good electrical properties and stability for consistent performance.

Technical Specifications

Diodes & Rectifiers 1N4935RLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N4935RLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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