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PTVS3V3S1UR

NXP Semiconductors

PTVS3V3S1UR by NXP Semiconductors

PTVS3V3S1UR by NXP Semiconductors is a 400W TRANS VOLTAGE SUPPRESSOR DIODE with 5.6V Breakdown Voltage and 8V Max Clamping Voltage. Ideal for transient suppression in automotive, industrial, and consumer electronics applications due to its AVALANCHE technology and UNIDIRECTIONAL polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 118,300 parts In-Stock

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Cyclops Electronics Ltd

UK . 8,820 parts In-Stock

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Vyrian

USA . 8,576 parts In-Stock

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Rebound Electronics

UK . 3,687 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Classic Components Corporation

USA . 1,832 parts In-Stock

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Digiode

USA . 1,803 parts In-Stock

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Anansix

USA . 1,386 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,085 parts In-Stock

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Nova Conductors

Japan . 82 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 182 parts In-Stock

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$0.031

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Aztec Data Supply Inc.

USA . 2,828 parts In-Stock

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$0.050

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Ampacity Inc.

Singapore . 1,249 parts In-Stock

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$1.010

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One Stop Electronics

USA . 636 parts In-Stock

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AZTECH Wire

Italy . 8,040 parts In-Stock

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RC Electronics

USA . 89,259 parts In-Stock

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A-Z Elektronik GmbH

Germany . 11,435 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Corphita

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Futuretech Components

Singapore . 3,000 parts In-Stock

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UNI Independent Distributors

Spain . 2,864 parts In-Stock

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Supply Digital

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Lixinc

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Enhance your electronic devices with the PTVS3V3S1UR by NXP Semiconductors, a top-tier manufacturer of Transient Suppression Devices. Safeguard your equipment from voltage spikes and surges with this single-configured diode, offering a maximum clamping voltage of 8V and superior protection. Whether you're in the automotive, industrial, or consumer electronics industry, this device ensures reliable performance and peace of mind. Upgrade your products today with NXP Semiconductors' cutting-edge technology, setting the standard for quality and durability in the market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-lasting performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

Can handle high levels of power surges or transient overvoltages, making it reliable in protecting sensitive electronic devices.

Nominal Breakdown Voltage: 5.6 V

Provides optimal protection by activating at a precise voltage level to divert excess current away from the protected circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for a wide range of applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Uses a specialized diode technology to quickly divert excess voltage, providing fast and effective protection against transient overvoltages.

Technical Specifications

Transient Suppression Devices PTVS3V3S1UR attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Maximum Breakdown Voltage:

6 V

Minimum Breakdown Voltage:

5.2 V

Nominal Breakdown Voltage:

5.6 V

Maximum Clamping Voltage:

8 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PTVS3V3S1UR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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