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PTVS15VP1UP,115

NXP Semiconductors

PTVS15VP1UP,115 by NXP Semiconductors

PTVS15VP1UP,115 by NXP Semiconductors is a single transient suppression device with a max power dissipation of 600W. It has a breakdown voltage of 17.6V and max clamping voltage of 24.4V. Ideal for protecting electronic circuits from voltage spikes in automotive and industrial applications.

Median Price

$0.138

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 56,715 parts In-Stock

1+ parts

-

100+ parts

$0.180

1k+ parts

$0.145

10k+ parts

$0.125

56,715

-

$0.180

$0.145

$0.125

Farnell

UK . 48,268 parts In-Stock

1+ parts

-

100+ parts

$0.163

1k+ parts

$0.142

10k+ parts

$0.116

48,268

-

$0.163

$0.142

$0.116

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.112

3,000

-

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-

$0.112

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.112

3,000

-

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$0.112

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.142

3,000

-

-

-

$0.142

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.134

1k+ parts

$0.111

10k+ parts

$0.099

3,000

-

$0.134

$0.111

$0.099

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 618 parts In-Stock

1+ parts

$0.104

100+ parts

-

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618

$0.104

-

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Nova Conductors

Japan . 43 parts In-Stock

1+ parts

$1.000

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43

$1.000

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Chip Stock

USA . 48,000 parts In-Stock

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48,000

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Bristol Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

$0.263

1k+ parts

$0.105

10k+ parts

$0.071

15,000

-

$0.263

$0.105

$0.071

Vyrian

USA . 5,715 parts In-Stock

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Anansix

USA . 1,179 parts In-Stock

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1,179

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 26,346 parts In-Stock

1+ parts

$0.093

100+ parts

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26,346

$0.093

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Corphita

USA . 2,589 parts In-Stock

1+ parts

$0.099

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2,589

$0.099

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AZTECH Wire

Italy . 10,944 parts In-Stock

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$0.160

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10,944

$0.160

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Microchip USA

USA . 1,086 parts In-Stock

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$0.564

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1,086

$0.564

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Netroflash

USA . 100 parts In-Stock

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$1.000

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100

$1.000

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Perfect Parts

USA . 137,760 parts In-Stock

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137,760

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Continental Prestige Electronics

USA . 74,445 parts In-Stock

1+ parts

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100+ parts

$0.252

1k+ parts

$0.142

10k+ parts

$0.111

74,445

-

$0.252

$0.142

$0.111

UNI Independent Distributors

Spain . 6,885 parts In-Stock

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6,885

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Eastek

USA . 3,000 parts In-Stock

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Supply Digital

USA . 290 parts In-Stock

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290

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Formix International (Excess)

India . 237 parts In-Stock

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237

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Overview

NXP Semiconductors presents the PTVS15VP1UP,115, a cutting-edge transient suppression device designed to provide reliable protection for your electronic systems. With a robust package body material of PLASTIC/EPOXY and state-of-the-art technology, this single-configured device offers superior performance and peace of mind. Ideal for various applications, this diode ensures maximum non-repetitive peak reverse power dissipation of 600W and a nominal breakdown voltage of 17.6V. Trust NXP Semiconductors to deliver quality and innovation in every product, making the PTVS15VP1UP,115 the smart choice for safeguarding your valuable equipment.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, making it suitable for a variety of applications.

Config: SINGLE

Simplified configuration for ease of use and installation.

Surface Mount: YES

Allows for easy mounting on PCBs, saving space and simplifying assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Can handle high power surges, ensuring protection for connected devices.

Nominal Breakdown Voltage: 17.6 V

Provides reliable protection at the specified voltage to prevent damage to sensitive components.

Package Shape: RECTANGULAR

Compact design for efficient use of space on the PCB.

No. of Terminals: 2

Simple two-terminal design for easy integration into circuitry.

Package Style (Meter): SMALL OUTLINE

Compact package size for space-saving in electronic devices.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments.

Terminal Finish: TIN

Provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminals for secure attachment to the PCB.

Minimum Breakdown Voltage: 16.7 V

Ensures protection kicks in at a lower voltage to prevent damage to sensitive components.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for a specified duration, ensuring reliability during assembly.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during assembly processes.

Maximum Breakdown Voltage: 18.5 V

Provides protection up to a specified maximum voltage.

Reference Standard: AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

Compliance with industry standards ensures quality and reliability of the product.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient suppression, ensuring efficient protection.

Technology: AVALANCHE

Utilizes avalanche breakdown for effective transient suppression.

Terminal Form: FLAT

Flat terminals for easy soldering and secure connection.

Maximum Repetitive Peak Reverse Voltage: 15 V

Can handle repetitive peak reverse voltages up to the specified value.

Polarity: UNIDIRECTIONAL

Designed for protection in a single direction, ensuring targeted suppression of transient voltage.

Maximum Clamping Voltage: 24.4 V

Limits voltage spikes to a safe level, protecting connected devices.

Diode Element Material: SILICON

Silicon diode material ensures efficient transient suppression capabilities.

Technical Specifications

Transient Suppression Devices PTVS15VP1UP,115 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Maximum Breakdown Voltage:

18.5 V

Minimum Breakdown Voltage:

16.7 V

Nominal Breakdown Voltage:

17.6 V

Maximum Clamping Voltage:

24.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PTVS15VP1UP,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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