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PRTR5V0U2X

NXP Semiconductors

PRTR5V0U2X by NXP Semiconductors

The NXP Semiconductors PRTR5V0U2X is a single avalanche diode with a breakdown voltage of 7.5V and max breakdown voltage of 9V. It is a transient suppression device in a small outline package, ideal for protecting electronic circuits from voltage spikes during reflow soldering processes.

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Chip Stock

USA . 192,500 parts In-Stock

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Bristol Electronics

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Electronic Treasures

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Vyrian

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Sensible Micro Corp

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Digiode

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Prism Electronics

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First Choice Components Inc.

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ComSIT Distribution GmbH

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Semtec, LLC

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Nova Conductors

Japan . 150 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,791 parts In-Stock

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Advanced Electronics

New Zealand . 150 parts In-Stock

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Corohmni

South Africa . 799 parts In-Stock

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Ampacity Inc.

Singapore . 1,426 parts In-Stock

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AZTECH Wire

Italy . 9,205 parts In-Stock

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iodParts Technologies Inc.

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Overview

Enhance your electronic circuits with the PRTR5V0U2X by NXP Semiconductors, a top-tier manufacturer known for cutting-edge technology. As a transient suppression device, this product offers unparalleled protection against voltage spikes, ensuring optimal performance and longevity for your devices. Its compact design and reliable construction make it a versatile solution for a wide range of applications. Trust NXP Semiconductors to deliver quality products that provide value, benefits, and advantages to customers seeking superior electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the component, ensuring a longer lifespan in various operating conditions.

Nominal Breakdown Voltage: 7.5 V

Offers effective suppression of voltage spikes up to 7.5V, protecting connected components from damage.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving space and simplifying the overall design.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, making it an ideal choice for protecting sensitive electronics from voltage spikes.

Technology: AVALANCHE

Utilizes avalanche breakdown for fast response to transient events, ensuring efficient suppression of voltage spikes.

Technical Specifications

Transient Suppression Devices PRTR5V0U2X attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Maximum Breakdown Voltage:

9 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7.5 V

Case Connection:

ANODE

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PRTR5V0U2X Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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