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PRTR5V0U2AX,235

NXP Semiconductors

PRTR5V0U2AX,235 by NXP Semiconductors

PRTR5V0U2AX,235 by NXP Semiconductors is a single avalanche diode with 7.5V breakdown voltage, ideal for transient suppression applications. It features a small outline package with gull wing terminals and operates b/w -40°C to 85°C. Suitable for surface mount assembly with unidirectional polarity.

Median Price

$0.368

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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Digiode

USA . 338 parts In-Stock

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$0.484

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USA . 162,000 parts In-Stock

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Vyrian

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Anansix

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Aztec Data Supply Inc.

USA . 1,484 parts In-Stock

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$0.090

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Continental Prestige Electronics

USA . 6,680 parts In-Stock

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$0.251

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Argo Parts USA

USA . 1,589 parts In-Stock

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Bastille Electronics

Australia . 870 parts In-Stock

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$0.238

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$0.227

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$0.223

870

$0.251

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.256

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Corohmni

South Africa . 366 parts In-Stock

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Semicontronic

India . 42,535 parts In-Stock

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Ampacity Inc.

Singapore . 42,366 parts In-Stock

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Corphita

USA . 3,292 parts In-Stock

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AZTECH Wire

Italy . 7,083 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

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Overview

NXP Semiconductors presents the PRTR5V0U2AX,235, a top-of-the-line transient suppression device designed for superior protection and reliability. With a focus on quality and innovation, NXP Semiconductors ensures that this product meets the highest standards in the industry. Ideal for a wide range of applications, this device offers unparalleled value and benefits to customers, providing peace of mind and safeguarding against transient voltage spikes. Trust NXP Semiconductors for cutting-edge technology that delivers exceptional performance and reliability in every use.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the device.

Nominal Breakdown Voltage: 7.5 V

Offers reliable overvoltage protection by triggering at a specified voltage level, safeguarding connected devices from voltage spikes.

Maximum Operating Temperature: 85 °C

Allows the device to function effectively even in high temperature environments, making it suitable for a wide range of applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes trans voltage suppressor diode technology which is known for its efficient and fast response in suppressing voltage transients.

Polarity: UNIDIRECTIONAL

Provides protection in one direction only, ensuring that voltage spikes are directed away from sensitive components.

Technical Specifications

Transient Suppression Devices PRTR5V0U2AX,235 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Maximum Breakdown Voltage:

9 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PRTR5V0U2AX,235 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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