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PMN42XPE,115

NXP Semiconductors

PMN42XPE,115 by NXP Semiconductors

PMN42XPE,115 by NXP Semiconductors is a P-channel MOSFET designed for efficient power management. It supports a max drain current of 5.7 A and operates at temperatures up to 150 °C, making it ideal for high-performance applications in compact devices. Its surface mount configuration enhances design flexibility.

Median Price

$0.171

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 27,990 parts In-Stock

1+ parts

$0.171

100+ parts

$0.160

1k+ parts

$0.145

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27,990

$0.171

$0.160

$0.145

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Farnell

UK . 27,990 parts In-Stock

1+ parts

-

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$0.122

1k+ parts

$0.076

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$0.074

27,990

-

$0.122

$0.076

$0.074

Verical

USA . 25,000 parts In-Stock

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$0.401

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$0.357

25,000

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-

$0.401

$0.357

Distributors (In-Stock)

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Digiode

USA . 1,404 parts In-Stock

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$0.155

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1,404

$0.155

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Chip Stock

USA . 162,000 parts In-Stock

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162,000

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Vyrian

USA . 5,111 parts In-Stock

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Anansix

USA . 1,271 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 4,499 parts In-Stock

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$0.147

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4,499

$0.147

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AZTECH Wire

Italy . 10,627 parts In-Stock

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$0.180

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10,627

$0.180

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Continental Prestige Electronics

USA . 27,990 parts In-Stock

1+ parts

$0.247

100+ parts

$0.122

1k+ parts

$0.076

10k+ parts

-

27,990

$0.247

$0.122

$0.076

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Kepictronics

USA . 40,300 parts In-Stock

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40,300

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Metaverse IC Inc.

Canada . 34,300 parts In-Stock

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A-Z Elektronik GmbH

Germany . 8,650 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,524 parts In-Stock

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5,524

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UNI Independent Distributors

Spain . 4,282 parts In-Stock

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Supply Digital

USA . 909 parts In-Stock

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909

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Overview

Unlock seamless performance with the PMN42XPE,115 from NXP Semiconductors, a leader in innovative solutions. This P-channel transistor excels in enhancing efficiency across diverse applications, from power management to signal processing. Its robust design ensures reliable operation at high temperatures, providing you with peace of mind and longevity. Elevate your projects with this trusted component, where quality meets excellence for unmatched value.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

The P-channel configuration allows for easy integration in various circuit designs, especially those requiring high-side switching applications.

Configuration: SINGLE

Single configuration ensures simplicity in design and ease of use, making it suitable for a wide range of applications.

Surface Mount: YES

Surface mount technology enables compact designs and facilitates automated assembly, improving manufacturing efficiency.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides higher efficiency and performance, making it ideal for low-power and high-speed applications.

Maximum Drain Current (Abs) (ID): 5.7 A

A maximum drain current of 5.7 A allows for robust performance in various applications, supporting higher load requirements.

Maximum Power Dissipation (Abs): 8.33 W

With a maximum power dissipation of 8.33 W, the transistor can handle significant power loads without overheating, ensuring reliability in demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology contributes to lower on-resistance and faster switching times, enhancing overall efficiency and effectiveness in circuit performance.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150 °C allows the transistor to function effectively in high-temperature environments, broadening its application range.

Terminal Finish: TIN

Tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliable connections in electronic assemblies.

Maximum Time At Peak Reflow Temperature (s): 30

A 30-second tolerance at peak reflow temperature means that it can withstand soldering processes, adding to its versatility during production.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, it can be reliably integrated into high-temperature PCB assembly processes, maintaining integrity and performance.

Technical Specifications

Other Function Transistors PMN42XPE,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5.7 A

Maximum Drain Current (ID):

5.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMN42XPE,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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