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PHM21NQ15T

NXP Semiconductors

PHM21NQ15T by NXP Semiconductors

NXP Semiconductors' PHM21NQ15T is an N-CHANNEL FET for SWITCHING applications. Features include 150V DS Breakdown Voltage, 60A IDM, and 0.055 ohm RDS(on). With a max power dissipation of 62.5W, it operates in ENHANCEMENT MODE at up to 150°C.

Median Price

$0.400

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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DF Sales Co.

USA . 2,140 parts In-Stock

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DF Sales Co.

USA . 2,140 parts In-Stock

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Digiode

USA . 3,427 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 2,166 parts In-Stock

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Atlantic Semiconductor

USA . 2,166 parts In-Stock

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Anansix

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Electronics Depot

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Nova Conductors

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Corohmni

South Africa . 309 parts In-Stock

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$1.746

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Ampacity Inc.

Singapore . 1,285 parts In-Stock

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$7.050

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One Stop Electronics

USA . 640 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Corphita

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Aranea Global

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Overview

Unlock the power of advanced technology with the PHM21NQ15T by NXP Semiconductors. Designed with precision and expertise, this Power Field Effect Transistor (FET) offers unparalleled performance for a variety of applications. With its N-CHANNEL configuration and built-in diode, this transistor is perfect for high-speed switching operations. Experience enhanced efficiency and reliability with this state-of-the-art product that delivers outstanding results. Upgrade your projects with the PHM21NQ15T and discover a new level of quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs are known for their superior performance and efficiency in various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in preventing reverse current flow, making the transistor safer to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in turning on/off circuits.

Surface Mount: YES

Ideal for compact designs and easy installation onto circuit boards.

Maximum Drain-Source On Resistance: 0.055 ohm

Low on-resistance allows for efficient power handling and less heat dissipation.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without sacrificing performance.

Technical Specifications

Power Field Effect Transistors (FET) PHM21NQ15T attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Avalanche Energy Rating (EAS):

250 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

22.2 A

Maximum Drain Current (ID):

22.2 A

Maximum Drain-Source On Resistance:

.055 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-N8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

60 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PHM21NQ15T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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