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PH6030LT/R

NXP Semiconductors

PH6030LT/R by NXP Semiconductors

PH6030LT/R from NXP Semiconductors is a single N-channel MOSFET designed for high-efficiency power applications. It supports a max drain current of 76.7 A and power dissipation of 62.5 W, operating up to 150 °C. Ideal for enhancing performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,481 parts In-Stock

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3,481

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Vyrian

USA . 3,121 parts In-Stock

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3,121

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Anansix

USA . 2,781 parts In-Stock

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2,781

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 590 parts In-Stock

1+ parts

$48.050

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590

$48.050

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Corphita

USA . 1,949 parts In-Stock

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1,949

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UNI Independent Distributors

Spain . 699 parts In-Stock

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699

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Overview

Unlock exceptional performance with the PH6030LT/R from NXP Semiconductors, a leader in innovative technology. This N-channel Power FET excels in demanding applications, ensuring reliability and efficiency under high temperatures. Its surface mount design simplifies integration, making it ideal for modern electronics. Experience superior power management and enhanced durability, delivering unmatched value for your projects. Elevate your designs with NXP's trusted quality!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high electron mobility, allowing for better performance in switching applications, making this FET an efficient choice for power management.

Configuration: SINGLE

Single configuration makes this FET simpler to integrate into circuits, reducing complexity and potential points of failure.

Surface Mount: YES

Surface mount technology allows for compact designs and is ideal for automated assembly processes, facilitating easier and faster production.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are generally preferred for digital circuits due to their high input impedance, contributing to lower power consumption.

Maximum Drain Current (Abs) (ID): 76.7 A

A high maximum drain current rating enables the transistor to handle substantial loads, making it suitable for demanding applications.

Maximum Power Dissipation (Abs): 62.5 W

A high power dissipation rating allows this FET to operate under significant power loads without overheating, ensuring stability and reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers advantages such as lower on-resistance and reduced power losses, enhancing the overall efficiency of the device.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures that this FET can perform reliably in extreme conditions, making it suitable for a variety of applications.

Technical Specifications

Power Field Effect Transistors (FET) PH6030LT/R attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

76.7 A

Maximum Drain Current (ID):

76.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

PH6030LT/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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