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PDZ3.9B,115

NXP Semiconductors

PDZ3.9B,115 by NXP Semiconductors

PDZ3.9B,115 by NXP Semiconductors is a Zener diode with a nominal reference voltage of 3.9V and max reverse current of 3uA. It has a working test current of 5mA, making it suitable for applications requiring precise voltage regulation in small outline packages. With a max power dissipation of 0.4W and operating temperature up to 150°C, it is ideal for use in various electronic circuits where stable voltage references are needed.

Median Price

$0.042

Lifecycle Status

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1k+

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Chip1Stop

Japan . 225 parts In-Stock

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Newark

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Rochester

USA . 510,000 parts In-Stock

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Arrow

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Farnell

UK . 3,610 parts In-Stock

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Element14

Singapore . 2,082 parts In-Stock

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Verical

USA . 1,900 parts In-Stock

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Digiode

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Chip Stock

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Component Sense

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Ampacity Inc.

Singapore . 107,683 parts In-Stock

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Corphita

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AZTECH Wire

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Aztec Data Supply Inc.

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Component Stockers USA

USA . 899,451 parts In-Stock

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Corohmni

South Africa . 32 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Discover the PDZ3.9B,115 by NXP Semiconductors, a top-quality Zener Diode that exceeds expectations in performance and reliability. Designed with precision and expertise, this product offers unparalleled value to customers seeking high-quality components for their electronic applications. From its small outline package to its low reverse current, the PDZ3.9B,115 delivers outstanding benefits and advantages for your project needs. Trust NXP Semiconductors for superior semiconductor solutions that elevate your work to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various environments.

Config: SINGLE

The single configuration makes it easy to use and install in different circuit designs.

Working Test Current: 5 mA

With a working test current of 5 mA, this zener diode can handle a variety of voltage regulation tasks effectively.

Surface Mount: YES

Designed for surface mount applications, making it suitable for modern electronic devices with limited space.

Maximum Reverse Current: 3 uA

The low maximum reverse current ensures minimal power loss and efficient performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on circuit boards and efficient use of space.

No. of Terminals: 2

With two terminals, this zener diode is easy to connect and integrate into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style is suitable for compact electronic designs.

Maximum Voltage Tolerance: 3.35 %

The tight voltage tolerance ensures precise voltage regulation in different applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this zener diode can handle high-temperature environments.

Maximum Dynamic Impedance: 90 ohm

The low dynamic impedance allows for stable and reliable voltage regulation.

Terminal Finish: TIN

The tin terminal finish provides excellent conductivity and solderability.

Terminal Position: DUAL

The dual terminal position offers flexible mounting options in circuits.

Maximum Power Dissipation: 0.4 W

This zener diode can dissipate up to 0.4W of power, making it suitable for various applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this diode is easy to solder onto PCBs.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and reliability in assembly processes.

Diode Type: ZENER DIODE

Being a zener diode, it provides stable voltage regulation and protection in electronic circuits.

Maximum Voltage Temperature Coefficient: 0mv/°C

The zero voltage temperature coefficient ensures consistent performance over a wide temperature range.

Nominal Reference Voltage: 3.9 V

With a nominal reference voltage of 3.9V, this zener diode is suitable for specific voltage regulation tasks.

Technology: ZENER

Built with zener technology, this diode offers precise and consistent voltage regulation.

Terminal Form: GULL WING

The gull wing terminal form allows for easy surface mounting and secure connections.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures proper current flow and protection in circuits.

Diode Element Material: SILICON

Made of silicon, this zener diode offers high efficiency and reliability in voltage regulation applications.

Technical Specifications

Zener Diodes PDZ3.9B,115 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

90 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.9 V

Maximum Reverse Current:

3 uA

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Temperature Coefficient:

0 mV/Cel

Maximum Voltage Tolerance:

3.35 %

Working Test Current:

5 mA

Trade Compliance

PDZ3.9B,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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