Loading...

PDTD123ES,126

NXP Semiconductors

PDTD123ES,126 by NXP Semiconductors

Limited Part Number Data;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,727 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,727

-

-

-

-

Anansix

USA . 2,601 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,601

-

-

-

-

Digiode

USA . 1,079 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,079

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 2,197 parts In-Stock

1+ parts

$5.352

100+ parts

-

1k+ parts

$5.138

10k+ parts

$5.138

2,197

$5.352

-

$5.138

$5.138

AZTECH Wire

Italy . 937 parts In-Stock

1+ parts

$13.440

100+ parts

-

1k+ parts

-

10k+ parts

-

937

$13.440

-

-

-

One Stop Electronics

USA . 1,111 parts In-Stock

1+ parts

$176.100

100+ parts

-

1k+ parts

-

10k+ parts

-

1,111

$176.100

-

-

-

Corphita

USA . 3,799 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,799

-

-

-

-

UNI Independent Distributors

Spain . 675 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

675

-

-

-

-

Technical Specifications

Additional Parts PDTD123ES,126 attributes and parameters. Explore more Additional Parts devices from NXP Semiconductors

Technical Specifications

Other Names:

PDTD123ES AMO-ND
934059143126
PDTD123ES AMO

Category:

Discrete Semiconductor Products
Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors

Current - Collector (Ic) (Max):

500 mA

Resistor - Base (R1):

2.2 kOhms

Vce Saturation (Max) @ Ib, Ic:

300mV @ 2.5mA, 50mA

Mounting Type:

Through Hole

Voltage - Collector Emitter Breakdown (Max):

50 V

Supplier Device Package:

TO-92-3

Standard Package:

2,000

Transistor Type:

NPN - Pre-Biased

Package / Case:

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max:

500 mW

Packaging:

Tape & Box (TB)

Resistor - Emitter Base (R2):

2.2 kOhms

Current - Collector Cutoff (Max):

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce:

40 @ 50mA, 5V

Base Product Number:

PDTD123

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

PDTD123ES,126 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.21.0095

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.