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BST76A

NXP Semiconductors

BST76A by NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Package Shape: ROUND; Operating Mode: ENHANCEMENT MODE;

Median Price

$0.280

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Odintec Ltd.

Israel . 3,202 parts In-Stock

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Digiode

USA . 2,612 parts In-Stock

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Component Sense

UK . 1,643 parts In-Stock

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$0.280

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Semi Source

USA . 1,520 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,500 parts In-Stock

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Anansix

USA . 531 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 159 parts In-Stock

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Vyrian

USA . 53 parts In-Stock

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LittleDiode

UK . 8 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 959 parts In-Stock

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$12.050

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Corphita

USA . 4,246 parts In-Stock

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UNI Independent Distributors

Spain . 3,454 parts In-Stock

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Northwest PG Solutions

USA . 1,555 parts In-Stock

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Assy Fe

Spain . 1,047 parts In-Stock

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Native Components

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Robosynatics

Brazil . 250 parts In-Stock

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$1.681

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Lucentia Tech

USA . 250 parts In-Stock

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$1.815

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$1.681

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$1.681

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$1.681

Technical Specifications

Small Signal Field Effect Transistors (FET) BST76A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

180 V

Maximum Drain Current (Abs) (ID):

.3 A

Maximum Drain Current (ID):

.3 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BST76A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-33-126-6700, 5961331266700

NIIN

331266700

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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