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BC636,126

NXP Semiconductors

BC636,126 by NXP Semiconductors

BC636,126 by NXP Semiconductors is a PNP single transistor ideal for various applications. It offers a max power dissipation of 0.83 W, a min DC current gain (hFE) of 63, and operates up to 150 °C. Perfect for amplifying signals in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 153,000 parts In-Stock

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153,000

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Vyrian

USA . 4,304 parts In-Stock

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4,304

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Digiode

USA . 2,090 parts In-Stock

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Anansix

USA . 805 parts In-Stock

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805

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Native Components

USA . 34 parts In-Stock

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$5.654

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34

$5.654

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One Stop Electronics

USA . 1,503 parts In-Stock

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$25.050

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UNI Independent Distributors

Spain . 4,250 parts In-Stock

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4,250

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Corphita

USA . 3,918 parts In-Stock

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Northwest PG Solutions

USA . 2,146 parts In-Stock

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$5.540

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Overview

Elevate your projects with the BC636,126 by NXP Semiconductors, where quality meets innovation. This versatile PNP transistor ensures reliability in various applications, from consumer electronics to industrial control systems. With NXP's trusted reputation for excellence, you gain not only a powerful component but also peace of mind, knowing you're backed by industry-leading support and performance that drives efficiency and enhances your designs.

Feature Benefit Bullets

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration in circuits requiring this type of transistor, making it versatile for various applications.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces complexity, making it easier to work with in both prototyping and production.

Maximum Power Dissipation (Abs): 0.83 W

With a maximum power dissipation of 0.83 W, this transistor can handle moderate power loads effectively, ensuring reliable performance in various electronic circuits.

Minimum DC Current Gain (hFE): 63

A minimum DC current gain of 63 indicates good amplification capabilities, which is essential for efficient signal processing and switching applications.

Maximum Operating Temperature: 150 °C

The ability to operate at up to 150 °C makes this transistor suitable for high-temperature environments, ensuring longevity and stability in extreme conditions.

Maximum Collector Current (IC): 1 A

With a collector current rating of 1 A, this transistor can support significant load, making it ideal for power applications where current handling is crucial.

Technical Specifications

Other Function Transistors BC636,126 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

63

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

BC636,126 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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