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BC636-10,126

NXP Semiconductors

BC636-10,126 by NXP Semiconductors

BC636-10,126 by NXP Semiconductors is a PNP transistor designed for various applications. It features a max power dissipation of 0.83 W, a min DC current gain (hFE) of 63, and operates up to 150 °C. Ideal for signal amplification in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,712 parts In-Stock

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Digiode

USA . 2,033 parts In-Stock

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Anansix

USA . 351 parts In-Stock

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351

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One Stop Electronics

USA . 661 parts In-Stock

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$0.050

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661

$0.050

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Native Components

USA . 885 parts In-Stock

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$0.927

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885

$0.927

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Northwest PG Solutions

USA . 1,387 parts In-Stock

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$1.020

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Corphita

USA . 4,822 parts In-Stock

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UNI Independent Distributors

Spain . 839 parts In-Stock

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Overview

Unlock the potential of your projects with the BC636-10,126 PNP transistor from NXP Semiconductors, a trusted leader in innovation and quality. Designed for versatility, this reliable component excels in various applications, ensuring optimal performance under demanding conditions. Benefit from its robust power handling and efficient current gain, allowing you to create more compact and effective electronic solutions. Elevate your designs with NXP's commitment to excellence!

Feature Benefit Bullets

Polarity or Channel Type: PNP

The PNP configuration allows for easier integration in applications that require switching or amplifying signals in a negative voltage environment, making it a versatile choice for various electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making the product ideal for space-constrained applications without compromising functionality.

Maximum Power Dissipation (Abs): 0.83 W

With a power dissipation capability of 0.83 W, this transistor can handle significant power levels, ensuring reliable operation in demanding applications without overheating.

Minimum DC Current Gain (hFE): 63

A minimum DC current gain of 63 indicates efficient signal amplification, making this transistor suitable for applications that require strong performance in driving loads.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C ensures reliability in high-temperature environments, making this transistor suitable for industrial and automotive applications.

Maximum Collector Current (IC): 1 A

A maximum collector current of 1 A allows the transistor to drive larger loads, enhancing its versatility in various electronic circuits including power supply regulation and motor control.

Technical Specifications

Other Function Transistors BC636-10,126 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

63

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

BC636-10,126 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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